Related papers: Time resolution of silicon pixel sensors

The time resolution of the second monolithic silicon pixel prototype produced for the MONOLITH H2020 ERC Advanced project was studied using a femtosecond laser. The ASIC contains a matrix of hexagonal pixels with 100 {\mu}m pitch, readout…

A challenging goal of 20 ps for the total time resolution of the Multi-gap Resistive Plate Chambers (MRPCs) system has been recently addressed by high energy physics experiments. In order to meet this requirement, one should have a deeper…

We present results for time resolution studies performed on three different scintillating plastics and two silicon photo-multipliers. These studies are intended to determine whether scintillating plastic/silicon photo-multiplier systems can…

The understanding of the weighting field of irradiated silicon sensors is essential for calculating the response of silicon detectors in the radiation environment at accelerators like at the CERN LHC. Using 1-D calculations of…

Ultra-Fast Silicon Detectors (UFSDs) are n-in-p silicon detectors that implement moderate gain (typically 5 to 25) using a thin highly doped p++ layer between the high resistivity p-bulk and the junction of the sensor. The presence of gain…

The timing performance of silicon sensors bump-bonded to Timepix3 ASICs is investigated, prior to and after different types of irradiation up to $8 \times 10^{15} 1 \mathrm{\,Me\kern -0.1em V} \mathrm{ \,n_{eq}} {\mathrm{ \,cm}}^{-2}$. The…

Current and next-generation particle tracking detectors will incorporate precision timing capabilities with resolutions approaching tens of picoseconds. Using Technology Computer-Aided Design (TCAD) simulations of Low-Gain Avalanche Diode…

Photosensitive gaseous detectors with a simple photoelectron multiplication mechanism of resistive plate chambers (RPCs) are expected to have both a large photocoverage and an excellent time resolution and to be low-cost. To demonstrate the…

In this paper we explore the effect of $\delta$-ray emission, fluctuations in th e signal deposition on the detection of charged particles in silicon-based detec tors. We show that these two effects ultimately limit the resolution that can…

Performance of a simple method of particle identification via pulse rise time discrimination is demonstrated for slow pulses from charge-sensitive preamplifiers with rise times ranging from 10 ns to 500 ns. The method is based on a…

While sensing in high temporal resolution is necessary for wide range of application, it is still limited nowadays due to cameras sampling rate. In this work we try to increase the temporal resolution beyond the Nyquist frequency, which is…

The development of large-area homogeneous photo-detectors with sub-millimeter path lengths for direct Cherenkov light and for secondary-electrons opens the possibility of large time-of-flight systems for relativistic particles with…

A silicon carbide PIN detector was fabricated and its radiation tolerance under Ta heavy ion irradiation of 2370 MeV was evaluated. Its electrical properties, charge collection performance and time resolution of $\beta$-particles…

For the advancement of the understanding of timing systematics in pixelized readout chips and for the benefit of future fast timing detectors to aid 4D tracking technology in the HL-LHC, we have performed detailed studies of the timing…

We give an analytic treatment of the time resolution and efficiency of Single Photon Avalanche Diodes (SPADs) and Silicon Photomultipliers (SiPMs). We provide closed-form expressions for structures with uniform electric fields and efficient…

Detectors based on pixels with timing capabilities are gaining increasing importance in the last years. Next-to-come high-energy physics experiments at colliders require the use of time information in tracking, due to the expected levels of…

A new timing detector measuring ~50 MeV/c positrons is under development for the MEG II experiment, aiming at a time resolution $\sigma_t \sim 30~\mathrm{ps}$. The resolution is expected to be achieved by measuring each positron time with…

We studied time resolution and response power dependence of three terahertz detectors based on significantly different types of field effect transistors. We analyzed the photoresponse of custom-made Si junctionless FETs, Si MOSFETs and…

This paper describes the fundamental timing properties of a single-pixel sensor for charged particle detection based on the 3D-trench silicon structure. We derive the results both analytically and numerically by considering a simple ideal…

A monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch of approximately 100 $\mu$m. Three analog pixels were…