Related papers: A compact Verilog-A ReRAM switching model
Microdisk or microring modulators (MDMs or MRMs) realize compact electro-optic modulation in active silicon photonics (SiP) foundry platforms. A key advantage of these resonant modulators is that they readily implement dense wavelength…
Most research works on reconfigurable intelligent surfaces (RIS) rely on idealized models of the reflection coefficients, i.e., uniform reflection amplitude for any phase and sufficient phase shifting capability. In practice however, such…
Redox-based memristive devices are among the alternatives for the next generation of non volatile memories, but also candidates to emulate the behavior of synapses in neuromorphic computing devices. It is nowadays well established that the…
Vector autoregressive (VAR) models are widely used in multivariate time series analysis for describing the short-time dynamics of the data. The reduced-rank VAR models are of particular interest when dealing with high-dimensional and highly…
Stochastic behaviors of resistive random access memory (RRAM) play an important role in the design of cross-point memory arrays. A Monte Carlo compact model of oxide RRAM is developed and calibrated with experiments on various device stack…
Resistive switching devices, important for emerging memory and neuromorphic applications, face significant challenges related to control of delicate filamentary states in the oxide material. As a device switches, its rapid conductivity…
As transistors continue to scale down, device reliability has become a critical concern. In order to accurately simulate defect-induced reliability degradation in MOSFET based logic, memory and power devices, we develop RASP (Reliability Ab…
Sub/Near-threshold static random-access memory (SRAM) design is crucial for addressing the memory bottleneck in energy-constrained applications. However, the high integration density and reliability under process variations demand an…
Analog Content Addressable Memories (aCAMs) have proven useful for associative in-memory computing applications like Decision Trees, Finite State Machines, and Hyper-dimensional Computing. While non-volatile implementations using FeFETs and…
We demonstrate a non-volatile magnetoelectric magnonic memory (MEMM) that enables fully electrical write/read via direct magnon-driven sensing in an insulating antiferromagnet. A fabricated SrIrO3/La-BiFeO3/SrIrO3 trilayer exhibits sub-100…
Enhancing the switching speed of oxide-based memristive devices at a low voltage level is crucial for their use as non-volatile memory and their integration into emerging computing paradigms such as neuromorphic computing. Efforts to…
To support emerging applications ranging from holographic communications to extended reality, next-generation mobile wireless communication systems require ultra-fast and energy-efficient baseband processors. Traditional complementary…
Compact device models play a significant role in connecting device technology and circuit design. BSIM-CMG and BSIM-IMG are industry standard compact models suited for the FinFET and UTBB technologies, respectively. Its surface potential…
Non-invasive mobile electroencephalography (EEG) acquisition systems have been utilized for long-term monitoring of seizures, yet they suffer from limited battery life. Resistive random access memory (RRAM) is widely used in…
A powerful time series analysis modeling technique is presented to describe cycle-to-cycle variability in memristors. These devices show variability linked to the inherent stochasticity of device operation and it needs to be accurately…
Memristors as emergent nano-electronic devices have been successfully fabricated and used in non-conventional and neuromorphic computing systems in the last years. Several behavioral or physical based models have been developed to explain…
Bistable biochemical switches are ubiquitous in gene regulatory networks and signal transduction pathways. Their switching dynamics, however, are difficult to study directly in experiments or conventional computer simulations, because…
In our earlier work [Appl. Phys. Lett. 92, 022509 (2008)], we proposed nonvolatile vortex random access memory (VRAM) based on the energetically stable twofold ground state of vortex-core magnetizations as information carrier. Here we…
We present a unique compact model for oxide memristors, based upon the concentration of oxygen vacancies as state variables. In this model, the increase (decrease) in oxygen vacancy concentration is similar in effect to the reduction…
The resistive switching phenomena of HfO2 films grown by metalorganic chemical vapor deposition was studied for the application of ReRAM devices. In the fabricated Pt/HfO2/TiN memory cells, the bipolar resistive switching characteristics…