English

Compact Device Models for FinFET and Beyond

Emerging Technologies 2020-05-07 v1 Applied Physics

Abstract

Compact device models play a significant role in connecting device technology and circuit design. BSIM-CMG and BSIM-IMG are industry standard compact models suited for the FinFET and UTBB technologies, respectively. Its surface potential based modeling framework and symmetry preserving properties make them suitable for both analog/RF and digital design. In the era of artificial intelligence / deep learning, compact models further enhanced our ability to explore RRAM and other NVM-based neuromorphic circuits. We have demonstrated simulation of RRAM neuromorphic circuits with Verilog-A based compact model at NCKU. Further abstraction with macromodels is performed to enable larger scale machine learning simulation.

Keywords

Cite

@article{arxiv.2005.02580,
  title  = {Compact Device Models for FinFET and Beyond},
  author = {Darsen D. Lu and Mohan V. Dunga and Ali M. Niknejad and Chenming Hu and Fu-Xiang Liang and Wei-Chen Hung and Jia-Wei Lee and Chun-Hsiang Hsu and Meng-Hsueh Chiang},
  journal= {arXiv preprint arXiv:2005.02580},
  year   = {2020}
}

Comments

Invited talk at the Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), Kitakyushu, Japan, July 2018

R2 v1 2026-06-23T15:20:28.425Z