Related papers: A compact Verilog-A ReRAM switching model
Metallic oxides encased within Metal-Insulator-Metal (MIM) structures can demonstrate both unipolar and bipolar switching mechanisms, rendering them the capability to exhibit a multitude of resistive states and ultimately function as memory…
A large number of simulation models have been proposed over the years to mimic the electrical behaviour of memristive devices. The models are based either on sophisticated mathematical formulations that do not account for physical and…
Resistive memory-based reconfigurable systems constructed by CMOS-RRAM integration hold great promise for low energy and high throughput neuromorphic computing. However, most RRAM technologies relying on filamentary switching suffer from…
A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO4 layer is fabricated at a low thermal budget (~375C), enabling BEOL processes and CMOS integration. The devices show suitable properties for…
In recent times, Resistive RAMs (ReRAMs) have gained significant prominence due to their unique feature of supporting both non-volatile storage and logic capabilities. ReRAM is also reported to provide extremely low power consumption…
Optical static random access memory (O-SRAM) is one of the key components required for achieving the goal of ultra-fast, general-purpose optical computing. We propose and design a novel O-SRAM using fabrication-friendly photonics device…
Variability in memristive devices based on h-BN dielectrics is studied in depth. Different numerical techniques to extract the reset voltage are described and the corresponding cycle-to-cycle variability is characterized by means of the…
Highly accurate and predictive models of resistive switching devices are needed to enable future memory and logic design. Widely used is the memristive modeling approach considering resistive switches as dynamical systems. Here we introduce…
A unique set of characteristics are packed in emerging nonvolatile reduction-oxidation (redox)-based resistive switching memories (ReRAMs) such as their underlying stochastic switching processes alongside their intrinsic highly nonlinear…
Resistive random access memory (RRAM) is a promising candidate for next-generation nonvolatile memory (NVM) and in-memory computing applications. Compact models are essential for analyzing the circuit and system-level performance of…
In many cases, the behavior of physical memristive devices can be relatively well captured by using a single internal state variable. This study investigates the low-power control of first-order memristive devices to derive the most…
We present a framework dedicated to modelling the resistive switching operation of Valence Change Memory (VCM) cells. The method combines an atomistic description of the device structure, a Kinetic Monte Carlo (KMC) model for the creation…
Resistive switches are a class of emerging nanoelectronics devices that exhibit a wide variety of switching characteristics closely resembling behaviors of biological synapses. Assembled into random networks, such resistive switches produce…
Resistive switching memories allow electrical control of the conductivity of a material, by inducing a high resistance (OFF) or a low resistance (ON) state, using electrochemical and ion transport processes. As alternative to high…
With the proliferation of mobile devices, the need for an efficient model to restore any degraded image has become increasingly significant and impactful. Traditional approaches typically involve training dedicated models for each specific…
We demonstrate the first hardware implementation of an oscillatory neural network (ONN) utilizing resistive memory (ReRAM) for coupling elements. A ReRAM crossbar array chip, integrated into the Back End of Line (BEOL) of CMOS technology,…
Data movement costs constitute a significant bottleneck in modern machine learning (ML) systems. When combined with the computational complexity of algorithms, such as neural networks, designing hardware accelerators with low energy…
We explore the ways that a reference point may direct attention. Utilizing a stochastic choice framework, we provide behavioral foundations for the Reference-Dependent Random Attention Model (RD-RAM). Our characterization result shows that…
We report on resistive switching of memristive electrochemical metallization devices using 3D kinetic Monte Carlo simulations describing the transport of ions through a solid state electrolyte of an Ag/TiO$_{\text{x}}$/Pt thin layer system.…
Magnetic random access memory (MRAM) is a leading emergent memory technology that is poised to replace current non-volatile memory technologies such as eFlash. However, the scaling of MRAM technologies is heavily affected by…