Related papers: A compact Verilog-A ReRAM switching model
With the increasing penetration of converter-interfaced distributed generation systems, it would be advantageous to specify local compliance criteria for these devices to ensure the small-signal stability of the interconnected system.…
We have carried out a preliminary design and simulation of a single-electron resistive switch based on a system of two linear, parallel, electrostatically-coupled molecules: one implementing a single-electron transistor and another serving…
Intelligent reflecting surface (IRS) that enables the control of the wireless propagation environment has been looked upon as a promising technology for boosting the spectrum and energy efficiency in future wireless communication systems.…
We have presented a compact MOSFET model, which allows us to describe the I-V characteristics of irradiated long-channel and short-channel transistors in all operation modes at different measurement temperatures and interface trap…
Functional oxides based resistive memories are recognized as potential candidate for the next-generation high density data storage and neuromorphic applications. Fundamental understanding of the compositional changes in the functional…
Understanding the resistive switching behavior, or the resistance change, of oxide-based memristor devices, is critical to predicting their responses with known electrical inputs. Also, with the known electrical response of a memristor, one…
Read-only memory (ROM) provides deterministic access to predefined data mappings. Extending ROM concepts to the optical domain enables high-bandwidth, low-latency, and parallel memory access, but realizing compact and reconfigurable optical…
Realizing today's cloud-level artificial intelligence functionalities directly on devices distributed at the edge of the internet calls for edge hardware capable of processing multiple modalities of sensory data (e.g. video, audio) at…
We present theoretical estimates for a high-speed, low-loss, all-optical transistor using a micro-resonator device, whose fields interact evanescently with Rubidium vapor. We use a four-level electromagnetically induced absorption scheme to…
This paper presents a partial state-feedback reduced-order switching predictive model designed to support the next-generation lithography roadmap. The proposed approach addresses the trade-off between increasing the number of measurements…
The development in electronic sector has brought a remarkable change in the life style of mankind. At the same time this technological advancement results adverse effect on environment due to the use of toxic and non degradable materials in…
We have measured the transition process from the high to low resistivity states, i.e., the reset process of resistive switching based memristors based on Ni/HfO2/Si-n+ structures, and have also developed an analytical model for their…
In this study, we design a reservoir computing (RC) network by exploiting short- and long-term memory dynamics in Au/Ti/MoS$_2$/Au memristive devices. The temporal dynamics is engineered by controlling the thickness of the Chemical Vapor…
The controlled fabrication of actively switchable atomic-scale devices, in particular transistors, has remained elusive to date. Here we explain operation of an atomic-scale three-terminal device by a novel switching mechanism of bistable,…
The Reservoir Computing (RC) paradigm posits that sufficiently complex physical systems can be used to massively simplify pattern recognition tasks and nonlinear signal prediction. This work demonstrates how random topological magnetic…
The superior density of passive analog-grade memristive crossbars may enable storing large synaptic weight matrices directly on specialized neuromorphic chips, thus avoiding costly off-chip communication. To ensure efficient use of such…
Nonlinearity is a crucial characteristic for implementing hardware security primitives or neuromorphic computing systems. The main feature of all memristive devices is this nonlinear behavior observed in their current-voltage…
We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here we identify one of the main conceptual difficulties that…
Transition-metal oxide films, demonstrating the effects of both threshold and nonvolatile memory resistive switching, have been recently proposed as candidate materials for storage-class memory. In this work we describe some experimental…
Emerging nano-scale programmable Resistive-RAM (RRAM) has been identified as a promising technology for implementing brain-inspired computing hardware. Several neural network architectures, that essentially involve computation of scalar…