Related papers: Back hopping in spin-transfer-torque devices, poss…
Pinning and depinning of wave fronts are ubiquitous features of spatially discrete systems describing a host of phenomena in physics, biology, etc. A large class of discrete systems is described by overdamped chains of nonlinear oscillators…
Magnetization switching in ferromagnetic structures is an important process for technical applications such as data storage in spintronics, and therefore the determination of the corresponding switching rates becomes essential. We…
Modern magnetic thin film devices owe their success in large part to effects emerging from interlayer coupling and exchange interaction at interfaces. A prominent example is exchange bias (EB), a magnetic coupling phenomenon found in…
The magnetic Gilbert damping and spin-orbital to charge interconversion phenomenon play vital role in controlling the modern spintronics device performances. Though the ferromagnets (FMs) and heavy metals (HMs) are considered to be the key…
The switching of magnetic layers is studied under the action of a spin current in a ferromagnetic metal/non-magnetic metal/ferromagnetic metal spin valve. We find that the main contribution to the switching comes from the non-equilibrium…
A spin transport model is employed to study the effects of spin dephasing induced by diffusion-driven transit-time uncertainty through semiconductor spintronic devices where drift is the dominant transport mechanism. It is found that in the…
We describe spin transfer in a ferromagnet/normal metal/ferromagnet spin-valve point contact. Spin is transferred from the spin-polarized device current to the magnetization of the free layer by the mechanism of incoherent magnon emission…
A recent theory of magnetoresistance in positionally disordered organic semiconductors is extended to include exchange and dipolar couplings between polarons. Analytic results are discovered when the hyperfine, exchange, and dipolar…
Nanopillar spin valve devices are typically comprised of two ferromagnetic layers: a reference layer and a free layer whose magnetic orientation can be changed by both an external magnetic field and through the introduction of…
Nanoscale superlattices with uniaxial ferromagnetic layers antiferromagnetically coupled through non-magnetic spacers are recently used as components of magnetoresistive and recording devices. In the last years intensive experimental…
Current induced spin-orbit torques driven by the conventional spin Hall effect are widely used to manipulate the magnetization. This approach, however, is nondeterministic and inefficient for the switching of magnets with perpendicular…
We present an extension to simple s-d models, aiming at simulating ultrafast magnetization dynamics and spin transport in metallic heterostructures. In particular, we consider an alternative spin dissipation channel due to a finite exchange…
We theoretically investigate the switching of a perpendicular magnetic layer by in-plane charge current due to the spin Hall effect. We find that, in the high damping regime, the threshold switching current is independent of the damping…
The current driven magnetization dynamics of a thin-film, three magnetic terminal device (spin-flip transistor) is investigated theoretically. We consider a magnetization configuration in which all magnetizations are in the device plane,…
Current-induced magnetization switching, a fundamental phenomenon related to spin-transport of electrons, enables non-voltaic and fast information write, facilitating applications in low-power memory and logic devices. However,…
Current induced magnetization switching by spin-orbit torques offers an energy-efficient means of writing information in heavy metal/ferromagnet (FM) multilayer systems. The relative contributions of field-like torques and damping-like…
Spin-orbit torques offer a promising mechanism for electrically controlling magnetization dynamics in nanoscale heterostructures. While spin-orbit torques occur predominately at interfaces, the physical mechanisms underlying these torques…
In hopping magnetoresistance of doped insulators, an applied magnetic field shrinks the electron (hole) s-wave function of a donor or an acceptor and this reduces the overlap between hopping sites resulting in the positive magnetoresistance…
We demonstrate a strong tunability of the spin-pumping contribution to magnetic damping in a thin-film ferromagnetic free layer interfaced with a synthetic ferrimagnet (SFM), acting as a spin-sink, via a thin Cu-spacer. The effect strongly…
We theoretically study the crossover between spin Hall effect and spin swapping, a recently predicted phenomenon that consists in the interchange between the current flow and its spin polarization directions [Lifshits and Dyakonov, Phys.…