Related papers: Back hopping in spin-transfer-torque devices, poss…
We investigate the spin-transfer torque in a magnetic multilayer structure by means of a spin-diffusion model. The torque in the considered system, consisting of two magnetic layers separated by a conducting layer, is caused by a…
We analyze the statistical distribution of switching durations in spin-transfer switching induced by current steps, and discuss biasing strategies to enhance the reproducibility of switching durations. We use a macrospin approximation and…
The dynamics of the magnetization of the free layer in a spin-torque nano oscillator (STNO) influenced by a noncollinear alignment between the magnetizations of the free and pinned layers due to an interlayer exchange coupling has been…
Recent studies on magnetization dynamics induced by spin-orbit torque have revealed a weak dependence of the critical current for magnetization switching on the damping constant of a ferromagnetic free layer. This study, however, reveals…
The magnetization switching of a thin ferromagnetic layer placed on top of a heavy metal (such as Pt, Ta or W) driven by an in-plane current has been observed in recent experiments. The magnetization dynamics of these processes is studied…
Engineering and controlling heat and spin transport on the femtosecond time-scale in spintronic devices opens up new ways to manipulate magnetization with unprecedented speed. Yet the underlying reversal mechanisms remain poorly understood…
We analyse the phenomenon of back-hopping in spin-torque induced switching of the magnetization in perpendicularly magnetized tunnel junctions. The analysis is based on single-shot time-resolved conductance measurements of the pulse-induced…
We demonstrate current-induced bipolar switching in in-plane magnetized spin-valve devices that incorporate a perpendicularly magnetized spin polarizing layer. Further, hysteretic transitions into a state with intermediate resistance occur…
Spin-wave nonreciprocity, manifested as a frequency difference between counterpropagating modes, underpins many proposed magnonic devices. While this effect is commonly attributed to dipolar interactions or interfacial chirality, the…
We report a mechanical effect in spin-valve nanopillars due to spin transfer. A polarized current carrying electron spins transfers torque to local magnetization and leads to a magnetic switching of free layer. Like classical Einstein-de…
A crossover between two mechanisms destabilizing the magnetization in equilibrium by the spin transfer effect is found in a ferromagnetic multilayer consisting of an in-plane magnetized free layer and a perpendicularly magnetized pinned…
We report on the magnetic switching and backhopping effects due to spin-transfer-torque in magnetic tunnel junctions. Experimental data on the current-induced switching in junctions with MgO tunnel barrier reveal a random back-and-forth…
Understanding the magnetization dynamics induced by spin transfer torques in perpendicularly magnetized magnetic tunnel junction nanopillars and its dependence on material parameters is critical to optimizing device performance. Here we…
We have developed a self-aligned, high-yield process to fabricate CPP (current perpendicular to the plane) magnetic sensors of sub 100 nm dimensions. A pinned synthetic antiferromagnet (SAF) is used as the reference layer which minimizes…
A model for magnetoresistance in positionally disordered organic materials is presented and solved using percolation theory. The model describes the effects of spin flips on hopping transport by considering the effect of spin dynamics on an…
We propose a magnetization reversal model to explain the perpendicular switching of a single ferromagnetic layer induced by an in-plane current. Contrary to previously proposed reversal mechanisms that such magnetic switching is directly…
Magnetic nanodevices usually include a free layer whose configuration can be changed by spin-polarized current via the spin transfer effect, and a fixed reference layer. Here, we demonstrate that the roles of the free and the reference…
One essential feature in MRAM cells is the spin torque efficiency, which describes the ratio of the critical switching current to the energy barrier. Within this paper it is reported that the spin torque efficiency can be improved by a…
We summarize our recent findings on how current-driven magnetization switching and magnetoresistance in nanofabricated magnetic multilayers are affected by varying the spin-scattering properties of the non-magnetic spacers, the relative…
Despite the fact that the problem of interference mechanism of magnetoresistance in semiconductors with hopping conductivity was widely discussed, most of existing studies were focused on the model of spinless electrons. This model can be…