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Controlling the electronic properties via bandstructure engineering is at the heart of modern semiconductor devices. Here, we extend this concept to semimetals where, utilizing LuSb as a model system, we show that quantum confinement lifts…
The negatively-charged nitrogen-vacancy center (NV) in diamond forms a versatile system for quantum sensing applications. Combining the advantageous properties of this atomic-sized defect with scanning probe techniques such as atomic force…
We compare modulator designs on thick-film and thin-film silicon-on-insulator (SOI) substrates based on the carrier-depletion effect. This effect exhibits a lower junction capacitance as compared to its injection counterparts, leading to a…
Advanced interface engineering provides a way to control the ground state of correlated oxide heterostructures, which enables the shaping of future electronic and magnetic nanodevices with enhanced performance. An especially promising and…
We present an atomistic 3D simulation study of the performance of graphene nanoribbon (GNR) Schottky barrier (SB) FETs and transistors with doped reservoirs (MOSFETs) by means of the self-consistent solution of the Poisson and Schrodinger…
This thesis studies three kinds of mesoscopic systems and how one of their collective degrees of freedom is affected by a dissipative environment: a)Nanoelectromechanical systems based on semiconductor materials, and how surface friction…
Typical device architectures in polymer-based optoelectronic devices, such as field effect transistors organic light emitting diodes and photovoltaic cells include sub-100 nm semiconducting polymer thin-film active layers, whose…
This paper presents a study of the polymer-filler interfacial effects on filler dispersion and mechanical reinforcement in Polystyrene (PS) / silica nanocomposites by direct comparison of two model systems: un-grafted and PS-grafted silica…
Determinant Quantum Monte Carlo (DQMC) is used to study the effect of non-zero hopping t_f in the localized f-band of the periodic Anderson model (PAM) in two dimensions. The low temperature properties are determined in the plane of…
We report density-functional theory (DFT), atomistic simulations of the non-equilibrium transport properties of carbon nanotube (CNT) field-effect transistors (FETs). Results have been obtained within a self-consistent approach based on the…
Density-potential functional theory (DPFT) is an alternative formulation of orbital-free density functional theory that may be suitable for modeling the electronic structure of large systems. To date, DPFT has been applied mainly to quantum…
In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG structure. It produces large current density (>100 {\mu}A/{\mu}m…
Recent theories predict dissipationless spin current induced by an electric field in doped semiconductors. Nevertheless, the charge current is still dissipative in these systems. In this work, we theoretically predict the dissipationless…
We theoretically investigate the optical second-order sideband generation (OSSG) in an optical parity-time (PT) symmetric system, which consists of a passive cavity trapping the atomic ensemble and an active cavity. It is found that near…
Thicknesses-dependent performance of metal-two-dimensional (2D) semiconductor junctions (MSJ) in electronics/optoelectronics have attracted increasing attention, but till present, people have little knowledge about the micro-mechanism of…
Recently the superconducting diode effect (SDE) has attracted a lot of attention due to new possibilities in the field of superconducting electronics. One of the possible realizations of the SDE is the implementation in superconducting…
P-type doped CdTe free surfaces Schottky contacts, and even interfaces with isostructural p-ZnTe frequently exhibit downward band bending and moderate to high recombination velocities. Fermi level pinning by donor-like states can explain…
Cavity optomechanical systems are being widely developed for precision force and displacement measurements. For nanomechanical transducers, there is usually a trade-off between the frequency ($f_{M}$) and quality factor ($Q_{M}$), which…
We investigated theoretically the transmission properties of Dirac Fermions tunneling through a periodically (sinusoidal and rectangular) driven electrostatic barrier in Monolayer graphene. For the time harmonic potential with moderate to…
We investigate the electronic properties of semi-metallic (12,0) carbon nanotubes in the presence of a variety of mono-, di- and hexa-vacancy defects, by using first principle DFT combined with non-equilibrium Green's function technique. We…