Related papers: Complete DFM Model for High-Performance Computing …

This paper investigates the relationship between mapping style and device roadmap in Resistive Random Access Memory (ReRAM) architectures for neuromorphic computing. The study leverages simulations using DNN+NeuroSim to evaluate the impact…

Printed electronics (PE) feature low non-recurring engineering costs and low per unit-area fabrication costs, enabling thus extremely low-cost and on-demand hardware. Such low-cost fabrication allows for high customization that would be…

Full-Duplex (FD) Amplify-and-Forward (AF) Multiple-Input Multiple-Output (MIMO) relaying has been the focus of several recent studies, due to the potential for achieving a higher spectral efficiency and lower latency, together with inherent…

This chapter explores various aspects of the Dynamical Casimir Effect (DCE) and its implications in the context of circuit quantum electrodynamics (cQED). We begin by reviewing the origin and fundamental properties of the DCE, including…

The continued miniaturization of semiconductor devices, represented by Moore's law, has reached the atomic scale limit, requiring nanoscale quantum mechanical effects to be included in device simulations without empirical parameters. For…

Density functional theory (DFT) can run into serious difficulties with localized states in elements such as transition metals with occupied-d states and oxygen. In contrast, Hartree-Fock (HF) method can be a better approach for such…

We systematically study the bulk and finite size effects on the band structure of prototypical line node materials using density functional theory based computations. For the bulk system, we analyze quantum oscillations with changes in the…

Charge injection from electrodes into doped organic films is a widespread technology used in the majority of state-of-the-art organic semiconductor devices. Although such interfaces are commonly considered to form Ohmic contacts via strong…

As transistor features shrink beyond the 2 nm node, studying and designing for atomic scale effects become essential. Being able to combine conventional CMOS with new atomic scale fabrication routes capable of creating 2D patterns of highly…

Advanced microelectronics in the future may require semiconducting channel materials beyond silicon. Two-dimensional (2D) semiconductors, characterized by their atomically thin thickness, hold immense promise for high-performance electronic…

In this paper we have developed a two dimensional (2D) analytical model for surface potential and drain current for a long channel Dual Material Gate (DMG) Silicon-on-Insulator (SOI) Tunneling Field Effect Transistor (TFET). This model…

Disorder in high entropy alloys, arising from the random distribution of multiple elements, plays a crucial role in their novel properties desirable for various advanced engineering applications. We investigate the role of compositional and…

The band gap engineering of group IV semiconductors has not been well explored theoretically and experimentally, except for SiGe. Recently, GeSn has attracted much attention due to the possibility of obtaining a direct band gap in this…

This paper discusses a detailed design approach to determine the optimal input impedance (Rin) and bandwidth (BW) for current preamplifiers in Front End Electronics (FEE) of high-accuracy time measurement systems used in particle detection.…

The progress of the Internet of Things(IoT) technologies and applications requires the efficient low power circuits and architectures to maintain and improve the performance of the increasingly growing data processing systems. Memristive…

We study the Dynamical Casimir Effect (DCE) for a real scalar field $\varphi$ in $d+1$ dimensions, in the presence of a mirror that imposes Dirichlet boundary conditions and undergoes time-dependent motion or deformation. Using a…

Precision in identifying nanometer-scale device-killer defects is crucial in both semiconductor research and development as well as in production processes. The effectiveness of existing ML-based approaches in this context is largely…

Process simulation are performed in order to simulate the full fabrication process of an alternative nano-flash memory in order to optimise it and to improve the understanding of the dot storage formation. The influence of various…

Extensive work has demonstrated the excellent performance of orthogonal time frequency space (OTFS) modulation in high-mobility scenarios. Time-variant wideband channel estimation serves as one of the key compositions of OTFS receivers…

Neuromorphic hardware platforms can significantly lower the energy overhead of a machine learning inference task. We present a design-technology tradeoff analysis to implement such inference tasks on the processing elements (PEs) of a Non-…