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The electrical contact to two-dimensional (2D)-semiconductor materials are decisive to the electronic performance of 2D-semiconductor field-effect devices (FEDs). The presence of a Schottky barrier often leads to a large contact resistance,…
In recent years, scientific Complementary Metal Oxide Semiconductor (sCMOS) devices have been increasingly applied in X-ray detection, thanks to their attributes such as high frame rate, low dark current, high radiation tolerance and low…
Extending chip performance beyond current limits of miniaturisation requires new materials and functionalities that integrate well with the silicon platform. Germanium fits these requirements and has been proposed as a high-mobility channel…
We investigate the modification of photoluminescence (PL) from single semiconductor nanocrystal quantum dots (NCs) in proximity of metal and semiconducting Atomic Force Microscope (AFM) tips. The presence of the tip alters the radiative…
The p-type surface conductivity of H-terminated diamond (HD, H-diamond) has created new path ways for developing diamond based electronic devices as well as chemical and bio-sensors. However, the hydrophobic nature of the HD surface can…
Efficient design and performance of electrically actuated MEMS devices necessitate accurate estimation of electrostatic forces on the MEMS structures. This in turn requires thorough study of the capacitance of the structures and finally the…
First principles calculations based on hybrid density functional theory have been used to study the electronic and geometric properties of armchair silicon and germanium nanotubes ranging from A (3, 3) through A (9, 9). The approach used is…
Layered hexagonal Gamma--GeSe, a new polymorph of GeSe synthesized recently, shows strikingly high electronic conductivity in its bulk form (even higher than graphite) while semiconducting in the case of monolayer (1L). In this work, by…
Memory effects can have a profound impact on the resistivity of semiconductor systems, resulting in giant negative magnetoresistance and MIRO phenomena. This work opens the discussion of the memory effects in 3D conducting systems featured…
We use impedance spectroscopy to measure the high frequency properties of single-walled carbon nanotube field effect transistors (swCN-FETs). Furthermore, we extend Scanning Gate Microscopy (SGM) to frequencies up to 15MHz, and use it to…
We benchmark the ground state energies and the density profiles of atomic repulsive Fermi gases in optical lattices computed via Density Functional Theory (DFT) against the results of diffusion Monte Carlo (DMC) simulations. The main focus…
Different damping mechanisms in graphene nanoresonators are studied: charges in the substrate, ohmic losses in the substrate and the graphene sheet, breaking and healing of surface bonds (Velcro effect), two level systems, attachment…
We investigate the high-order harmonic generation (HHG) in doped semiconductors. The HHG is simulated with the single-electron time-dependent Schr\"{o}dinger equation (TDSE). The results show that the high-order harmonics in the second…
Cold metals, characterized by their distinctive band structures, hold promise for innovative electronic devices such as tunnel diodes with negative differential resistance (NDR) effect and field-effect transistors (FETs) with sub-60 mV/dec…
Quantum Hall effect (QHE) devices are a pillar of modern quantum electrical metrology. Electrical networks including one or more QHE elements can be used as quantum resistance and impedance standards. The analysis of these networks allows…
Reset elements are nonlinear filters that improve control performance beyond linear time-invariant (LTI) limits but introduce higher-order harmonics that complicate design. Although frequency-domain tools like describing functions (DFs) and…
We consider a downlink (DL) massive multiple-input multiple-output (MIMO) system, where different users have different mobility profiles. To support this system, we categorize the users into two disjoint groups according to their mobility…
We propose a theory for the new effects recently observed by Willett et al [1] in the magnetoresistance of a weakly modulated two dimensional electron gas near filling factor 1/2. Minima in transverse magnetoresistance and maxima in…
We consider the proximity effect in multiterminal ferromagnet superconductor (FSF) hybrid structures in which two or three electrodes are connected to a superconductor. We show that two competing effects take place in these systems: (i)…
Layered transition-metal dichalcogenide (TMD) HfTe2 is a topological semimetal candidate with increasing attentions recently. The map of the Fermi surface is of interest and importance to understand its properties. Here we present a study…