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Experimental results obtained previously for the photoluminescence efficiency (PL$_{eff}$) of Ge quantum dots (QDs) are theoretically studied. A $\log$-$\log$ plot of PL$_{eff}$ versus QD diameter ($D$) resulted in an identical slope for…
The MOS devices are the basic building block of any digital and analog circuits, where silicon (Si) is the most commonly used material. The International Technology Roadmap Semiconductor (ITRS) report predicts the gate length of the MOS…
Density functional theory (DFT) calculations of the energy of magnetic anisotropy for diluted ferromagnetic semiconductor GeMnTe were performed using using OpenMX package with fully relativistic pseudopotentials. The influence of hole…
In a recent Letter, Zhao et al. [1] reported the origin of quasi-one-dimensional metal-insulator (MI) transitions in compound semiconductor surfaces. Based on a density-functional theory (DFT) calculation within the generalized gradient…
Though most fermionic Mott insulators order at low temperatures, ordering is ancillary to their insulating behaviour. Our emphasis here is on disentangling ordering from the intrinsic strongly correlated physics of a doped half-filled band.…
A novel 3D micromechanical Finite Element Model (FEM) has been developed to depict the Poynting effect in bi-phasic Representative volume element (RVE) with axons embedded in surrounding extra-cellular matrix (ECM) for simulating the brain…
Studies of different experimental groups that explore the properties of a two-dimensional electron gas in silicon semiconductor systems ((100) Si metal-oxide-semiconductor field-effect transistors (MOSFETs) and (100) SiGe/Si/SiGe quantum…
The piece of NESTOR vacuum chamber with the ceramic insertion for DC-monitor and RF-shields was simulated by using both transient and wake field solvers of CST Studio Suite. For a 6 mm gap between two RF-shields the contributions of the…
Dual-material double-gate tunnel field effect transistor (DMDG TFET) is a promising candidate for low-power, high-speed electronics due to enhanced electrostatic control and superior switching characteristics. Integrating a pocket region…
Doubly enhanced third harmonic generation (THG) is realized by the electric dipole resonance (EDR) in silicon nanodisks placed onto a metallic film at near-infrared. By introducing the metal substrate, the perfect electric conductor (PEC)…
We point out that although a litany of studies have been published on atoms in hard-wall confinement, they have not been systematic or have not used robust numerical methods. We report a methodical study of atoms in hard-wall confinement…
We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. Stable Coulomb blockade behavior free from the effects of…
This study explores the impact of wall slip on parameter estimation for integral-type non-linear viscoelastic models with time-strain separable memory functions, specifically examining high-density polyethylene (HDPE) and thermoplastic…
One primary concern in diluted magnetic semiconductors (DMSs) is how to establish a long-range magnetic order with a low magnetic doping concentration to maintain the gate tunability of the host semiconductor, as well as to increase Curie…
The present paper numerically analyzes a passive cooling system using enclosures with different geometries filled with thermal conductivity-enhanced phase change material (PCM). A numerical code is developed using an unstructured…
This paper shows that linearizing the transverse discontinuity mapping (TDM) in Filippov systems can produce inaccurate predictions of the dynamics in impact oscillators operating near a pre-stressed soft barrier. This discrepancy arises…
The proximity effect refers to the phenomenon whereby superconducting properties are induced in a normal conductor that is in contact with an intrinsically superconducting material. In particular, the combination of nano-structured…
The continuous scaling of semiconductor-based technologies to micron and sub-micron regimes has resulted in higher device density and lower power dissipation. Many physical phenomena such as self-heating or current leakage become…
The scalability of spin qubit devices is conditioned by qubit-to-qubit variability. Disorder in the host materials indeed affects the wave functions of the confined carriers, which leads to variations in their charge and spin properties.…
High harmonic generation (HHG) in solids reflects the underlying nonperturbative nonlinear dynamics of electrons in a strong light field and is a powerful tool for ultrafast spectroscopy of electronic structures. Photo-carrier doping allows…