Related papers: Complete DFM Model for High-Performance Computing …
This paper describes a simple microwave apparatus to measure the Hall effect in semiconductor wafers. The advantage of this technique is that it does not require contacts on the sample or the use of a resonant cavity. Our method consists of…
This paper introduces a new approach for simulating magnetic properties of nanocomposites comprising magnetic particles embedded in a non-magnetic matrix, taking into account the 3D structure of the system in which particles' positions…
This work proposes an investigation on the scaling of the structural strength of polymer/graphene nanocomposites. To this end, fracture tests on geometrically scaled Single Edge Notch Bending (SENB) specimens with varying contents of…
Reducing the contact resistance of field-effect transistors based on two-dimensional materials is one of the key improvements required to enable the integration of such transistors in an advanced semiconductor manufacturing process.…
The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of existing CMOS integration technologies, such devices can offer a platform for…
Parallel, additive white Gaussian noise (AWGN) channels with an average sum power constraint are considered. It is shown how the waterfilling Shannon capacity can be approached by higher order modulation and probabilistic amplitude shaping…
Fiber jamming modules (FJMs) offer flexibility and quick stiffness variation, making them suitable for follow-the-leader (FTL) motions in continuum robots, which is ideal for minimally invasive surgery (MIS). However, their potential has…
Designing a high-quality control is crucial for reliable quantum computation. Among the existing approaches, closed-loop leaning control is an effective choice. Its efficiency depends on the learning algorithm employed, thus deserving…
A common issue in low temperature measurements of enhancement-mode metal-oxide-semiconductor (MOS) field-effect transistors (FETs) in the low electron density regime is the high contact resistance dominating the device impedance. In that…
Strain-mediated multiferroic composite structures are gaining scientific and technological attractions because of the promise of low power consumption and greater flexibility in material and geometry choices. In here, the direct…
With 3D-stacked DRAM architectures becoming more prevalent, it has become important to find ways to characterize and mitigate the adverse effects that can hinder their inherent access parallelism and throughput. One example of such…
Direct visualizations of spin accumulation due to the enhanced spin Hall effect (SHE) in bismuth (Bi) - doped silicon (Si) at room temperature are realized by using helicity-dependent photovoltage (HDP) measurements. Under application of a…
Optimizing sensor readout schemes and integrated circuit designs for both open-loop and closed-loop implementations requires precise modeling and simulation strategies. This study introduces a novel two-port impedance model to estimate the…
We report device level damping measurements using spin-torque driven ferromagnetic resonance on perpendicular magnetic random-access memory (MRAM) cells. It is shown that thermal agitation enhances the apparent damping for cells smaller…
Recent advances in nanofabrication technology now enable unprecedented control over 2D heterostructures, in which single- or few-atom thick materials with synergetic opto-electronic properties can be combined to develop next-generation…
Band bending is a central concept in solid-state physics that arises from local variations in charge distribution especially near semiconductor interfaces and surfaces. Its precision measurement is vital in a variety of contexts from the…
The so-called spin-orbit proximity effect experimentally realized in graphene (G) on several different heavy metal surfaces opens a new perspective to engineer the spin-orbit coupling (SOC) for new generation spintronics devices. Here, via…
We have investigated change in the electronic structures of atomically-controlled La$_{1-x}$Sr$_x$MnO$_3$ (LSMO) thin films as a function of hole-doping level ($x$) in terms of {\it in situ} photoemission spectroscopy (PES) and x-ray…
In this paper, we used the 8-band k$\cdot$p model with valence force field considerations to investigate the effect of size and shape on electronic and optical properties of cadmium selenide quantum dots. Major factors related to their…
Using angle-resolved photoemission spectroscopy (ARPES) and low-energy electron diffraction (LEED), together with density-functional theory (DFT) calculation, we report the formation of charge density wave (CDW) and its interplay with the…