Related papers: Complete DFM Model for High-Performance Computing …
Over the last two decades, the new branch of spintronics, i.e., semiconductor spintronics, has gained more attention because it integrates the characteristics of conventional semiconductors, such as optical bandgap and charge carriers,…
Metal-semiconductor contacts play a key role in electronics. Here we show that for quasi-one dimensional (Q1D) structures such as nanotubes and nanowires, side contact with the metal only leads to weak band realignment, in contrast with…
Hybrid superconductor-semiconductor systems have received a great deal of attention in the last few years because of their potential for quantum engineering, including novel qubits and topological devices. The proximity effect, the process…
Despite the large number of theoretical III-V semiconductor studies reported every year, our atomistic understanding is still limited. The limitations of the theoretical approaches to yield accurate structural and electronic properties on…
This paper presents an analytical approach to explore the damping effect of inner loops on grid-forming converters. First, an impedance model is proposed to characterize the behaviors of inner loops, thereby illustrating their influence on…
In this paper, a design space exploration of power delivery networks is performed for multi-chip 2.5-D and 3-D IC technologies. The focus of the paper is the effective placement of the voltage regulator modules (VRMs) for power supply noise…
While various obfuscation methods exist in the digital domain, techniques for protecting Intellectual Property (IP) in the analog domain are mostly overlooked. Understandably, analog components have a small footprint as most of the surface…
While numerous obfuscation techniques are available for securing digital assets in the digital domain, there has been a notable lack of focus on protecting Intellectual Property (IP) in the analog domain. This is primarily due to the…
We experimentally and theoretically investigate mechanical nanooscillators coupled to the light in an optical ring resonator made of dielectric mirrors. We identify an optomechanical damping mechanism that is fundamentally different to the…
We study the effect of torsional deformations on the electronic properties of single-walled transition metal dichalcogenide (TMD) nanotubes. In particular, considering forty-five select armchair and zigzag TMD nanotubes, we perform…
In this study the dynamic behaviour of perforated microplates oscillating under the effect of squeeze film damping is analyzed. A numerical approach is adopted to predict the effects of damping and stiffness transferred from the surrounding…
Real-space mapping of doping concentration in semiconductor devices is of great importance for the microelectronic industry. In this work, a scanning microwave impedance microscope (MIM) is employed to resolve the local conductivity…
We report a general macroscopic theory for the electrodynamic response of semi-infinite metals (SIMs). The theory includes the hitherto overlooked capacitive effects due to the finite spatial extension of a surface. The basic structure of…
Sensors and actuators based on resonant micro-electro-mechanical systems (MEMS), such as scanning micro mirrors, are well-established in automotive and consumer products. As the areas of application broaden, the requirements for the MEMS…
Semiconductor devices are scaled down to the level which constituent materials are no longer considered continuous. To account for atomistic randomness, surface effects and quantum mechanical effects, an atomistic modeling approach needs to…
The performance of nanoscale electronic devices based on a two-three dimensional (2D-3D) interface is significantly affected by the electrical contacts that interconnect these materials with external circuitry. This work investigates charge…
This paper presents the effectiveness of various stress conditions (mainly voltage and frequency) on detecting the resistive shorts and open defects in deep sub-micron embedded memories in an industrial environment. Simulation studies on…
The doped silicon regions (tubs) in PWFDSOI MOSFET cause significant reduction in OFF current by reducing the number of carriers contributing to the OFF current. The emphasis of the simulation and device physics study on PWFDSOI MOSFET…
Continuous scaling of the VLSI system leaves a great challenge on manufacturing and optical proximity correction (OPC) is widely applied in conventional design flow for manufacturability optimization. Traditional techniques conducted OPC by…
We study a 2D mesoscopic ring with an anisotropic effective mass considering surface quantum confinement effects. Consider that the ring is defined on the surface of a cone, which can be controlled topologically and mapped to the 2D ring in…