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We fabricate and characterize dual-gated graphene field-effect transistors (FETs) using Al2O3 as top-gate dielectric. We use a thin Al film as a nucleation layer to enable the atomic layer deposition of Al2O3. Our devices show mobility…

Mesoscale and Nanoscale Physics · Physics 2009-11-13 Seyoung Kim , Junghyo Nah , Insun Jo , Davood Shahrjerdi , Luigi Colombo , Zhen Yao , Emanuel Tutuc , Sanjay K. Banerjee

Contact resistances often contribute significantly to the overall device resistance in organic field-effect transistors (OFETs). Understanding charge injection at the metal-organic interface is critical to optimizing OFET device…

Materials Science · Physics 2009-11-11 D. Natelson , B. H. Hamadani , J. W. Ciszek , D. A. Corley , J. M. Tour

Printed and flexible electronics (PFE) have emerged as the ubiquitous solution for application domains at the extreme edge, where the demands for low manufacturing and operational cost cannot be met by silicon-based computing. Built on…

Hardware Architecture · Computer Science 2025-05-02 Mehdi B. Tahoori , Emre Ozer , Georgios Zervakis , Konstantinos Balaskas , Priyanjana Pal

Printed circuit metasurfaces have attracted significant attention in the microwave community for their versatile wavefront manipulation capability. Despite their promising potential in telecommunications and radar applications, few…

Applied Physics · Physics 2021-04-08 Andreas E. Olk , Pierre E. M. Macchi , David A. Powell

We show that simple, commercially sourced n-channel silicon field-effect transistors (nFETs) operating under closed loop control exhibit an ~3-fold improvement in pH readout resolution to (7.2+/-0.3)x10^-3 at a bandwidth of 10 Hz when…

We study field effect transistor characteristics in etched single layer MoS2 nanoribbon devices of width 50nm with ohmic contacts. We employ a SF6 dry plasma process to etch MoS2 nanoribbons using low etching (RF) power allowing very good…

Mesoscale and Nanoscale Physics · Physics 2019-04-02 D. Kotekar-Patil , J. Deng , S. L. Wong , Chit Siong Lau , Kuan Eng Johnson Goh

Intimate integration of memory devices with logic transistors is a frontier challenge in computer hardware. This integration is essential for augmenting computational power concurrently with enhanced energy efficiency in big-data…

In this paper, we demonstrate by simulation the general usability of an electrostatically doped and electrically reconfigurable planar field-effect transistor (FET) structure. The device concept is partly based on our already published and…

Materials Science · Physics 2014-05-30 Tillmann Krauss , Frank Wessely , Udo Schwalke

Conjugated polymer films that can conduct ionic and electronic charges are central to building soft electronic sensors and actuators. Despite the possible interplay between light absorption and mixed conductivity of these materials in…

Two-dimensional materials (2DMs) are a promising alternative to complement and upgrade high-frequency electronics. However, in order to boost their adoption, the availability of numerical tools and physically-based models able to support…

Preparing graphene and its derivatives on functional substrates may open enormous opportunities for exploring the intrinsic electronic properties and new functionalities of graphene. However, efforts in replacing SiO$_{2}$ have been greatly…

Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are of potential to use in…

High-performance $n$-type organic field-effect transistors were developed with ionic-liquid gates and N,N$^"$-bis(n-alkyl)-(1,7 and 1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide)s single-crystals. Transport measurements show that these…

Materials Science · Physics 2015-05-20 S. Ono , N. Minder , Z. Chen , A. Facchetti , A. F. Morpurgo

We demonstrate ink-jet printing as a viable method for large area fabrication of graphene devices. We produce a graphene-based ink by liquid phase exfoliation of graphite in N-Methylpyrrolidone. We use it to print thin-film transistors,…

We report on the experimental demonstration and electrical characterization of N = 7 armchair graphene nanoribbon (7-AGNR) field effect transistors. The back-gated transistors are fabricated from atomically precise and highly aligned…

Mesoscale and Nanoscale Physics · Physics 2018-03-21 Vikram Passi , Amit Gahoi , Boris V. Senkovskiy , Danny Haberer , Felix R. Fischer , Alexander Grüneis , Max C. Lemme

We report the realization of field-effect transistors (FETs) made with chemically- synthesized layered two dimensional (2D) crystal semiconductor WS2. The 2D Schottky-barrier FETs demonstrate ambipolar behavior and a high (~105x) on/off…

The maturity of the chemical vapor deposition graphene-based device processing has increased from chip level demonstrations to wafer-scale fabrication in the past few years. Due to this wafer-scale, electrical characterization and analysis…

Mesoscale and Nanoscale Physics · Physics 2026-02-20 Anton Murros , Miika Soikkeli , Anni Virta , Arantxa Maestre , Leire Morillo , Alba Centeno , Amaia Zurutuza , Olli-Pekka Kilpi

Two-dimensional (2D) materials with extraordinary electrical properties, hold promising for large-scale, flexible electronics. However, their device performance could be hindered due to the excessive defects introduced via traditional…

This paper reports the first demonstration of a magnet-free, high performance microelectromechanical system (MEMS) based circulator. An innovative circuit based on the commutation of MEMS resonators with high quality (Q) factor using RF…

The unique optoelectronic properties of graphene [1] make it an ideal platform for a variety of photonic applications [2], including fast photodetectors [3], transparent electrodes [4], optical modulators [5], and ultra-fast lasers [6].…

Mesoscale and Nanoscale Physics · Physics 2012-10-02 L. Vicarelli , M. S. Vitiello , D. Coquillat , A. Lombardo , A. C. Ferrari , W. Knap , M. Polini , V. Pellegrini , A. Tredicucci