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Related papers: Direct-written polymer field-effect transistors op…

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Thanks to recent progress in terms of materials properties, polymer field-effect transistors (FETs) operating in the MHz range can be achieved. However, further development towards challenging frequency ranges, for a field accustomed to…

Applied Physics · Physics 2019-05-07 Michele Giorgio , Mario Caironi

Organic printed electronics is proving its suitability for the development of wearable, lightweight, distributed applications in combination with cost-effective production processes. Nonetheless, some necessary features for several…

Applied Physics · Physics 2019-12-02 Andrea Perinot , Mario Caironi

Organic printed electronics has proven its potential as an essential enabler for applications related to healthcare, entertainment, energy and distributed intelligent objects. The possibility of exploiting solution-based and direct-writing…

Applied Physics · Physics 2020-09-16 Andrea Perinot , Michele Giorgio , Virgilio Mattoli , Dario Natali , Mario Caironi

In this paper we present an improved process for producing elastomer transistor stamps and high-mobility organic field-effect transistors (FETs) based on semiconducting acene molecular crystals. In particular, we have removed the need to…

Soft Condensed Matter · Physics 2009-11-13 A. P. Micolich , L. L. Bell , A. R. Hamilton

Fermi-level pinning (FLP) effect was widely observed in thin-film transistors (TFTs) with van der Waals (vdW) layered semiconductors (organic or two-dimensional) when contact electrodes were thermally evaporated1-3. Intensive investigation…

Applied Physics · Physics 2023-06-27 Zhiyun Wu , Shuiren Liu , Juzhong Zhang , Hanyu Jia , Qingqing Sun , Xiaoguang Hu , Lingxian Meng , Xuying Liu

We report on the simple fabrication of hysteresis-free and electrically stable organic field-effect transistors (OFETs) and inverters operating at voltages <1-2 V, enabled by the almost trap-free interface between the organic semiconductor…

Materials Science · Physics 2010-01-01 M. P. Walser , W. L. Kalb , T. Mathis , B. Batlogg

Solution processed polymers are at the core of organic electronics. Polyradicals (polymers in which each repeating unit contains an unpaired spin) are unique alternatives to their p-conjugated, semiconducting counterparts. Unique of…

Applied Physics · Physics 2019-10-24 Deepa Singh , Francois Magnan , Joe B. Gilroy , Giovanni Fanchini

Graphene solution-gated field-effect transistors (SGFETs) are a promising platform for the recording of cell action potentials due to the intrinsic high signal amplification of graphene transistors. In addition, graphene technology fulfils…

Soft, stretchable organic field-effect transistors (OFETs) can provide powerful on-skin signal conditioning, but current fabrication methods are often material-specific: each new polymer semiconductor (PSC) requires a tailored process. The…

A chip to wafer scale, CMOS compatible method of graphene device fabrication has been established, which can be integrated into the back end of the line (BEOL) of conventional semiconductor process flows. In this paper, we present…

Applied Physics · Physics 2022-11-23 A. D. Smith , S. Vaziri , S. Rodriguez , M. Östling , M. C. Lemme

we have fabricated transparent electronic devices based on graphene materials with thickness down to one single atomic layer by the transfer printing method. The resulting printed graphene devices retain high field effect mobility and have…

Materials Science · Physics 2008-09-10 Jian-Hao Chen , Masa Ishigami , Chaun Jang , Daniel R. Hines , Michael S. Fuhrer , Ellen D. Williams

We report the realization of field-effect transistors (FETs) made with chemically synthesized multilayer 2D crystal semiconductor MoS2. Electrical properties such as the FET mobility, subthreshold swing, on/off ratio, and contact resistance…

Mesoscale and Nanoscale Physics · Physics 2015-01-30 Wan Sik Hwang , Maja Remskar , Rusen Yan , Tom Kosel , Jong Kyung Park , Byung Jin Cho , Wilfried Haensch , Huili , Xing , Alan Seabaugh , Debdeep Jena

We report on fabrication of novel field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically…

Materials Science · Physics 2009-11-10 V. Podzorov , M. E. Gershenson , Ch. Kloc , R. Zeis , E. Bucher

Two-dimensional materials-based field-effect transistors (2DM-FETs) exhibit both ambipolar and unipolar transport types. To physically and compactly cover both cases, we put forward a quasi-Fermi-level phase space (QFLPS) approach to model…

Ferroelectric field-effect transistors (FeFET) with two-dimensional (2D) semiconductor channels are promising low-power, embedded non-volatile memory (NVM) candidates for next-generation in-memory computing. However, the performance of…

Field-effect transistors (FETs) with non-covalently functionalised molybdenum disulfide (MoS2) channels grown by chemical vapour deposition (CVD) on SiO2 are reported. The dangling-bond-free surface of MoS2 was functionalised with a…

A printing process for high-resolution transfer of all components for organic electronic devices on plastic substrates has been developed and demonstrated for pentacene (Pn), poly (3-hexylthiophene) and carbon nanotube (CNT) thin-film…

Materials Science · Physics 2009-11-11 D. R. Hines , S. Mezhenny , M. Breban , E. D. Williams , V. W. Ballarotto , G. Esen , A. Southard , M. S. Fuhrer

The development of high-performance multifunctional polymer-based electronic circuits is a major step towards future flexible electronics. Here, we demonstrate a tunable approach to fabricate such devices based on rationally designed…

We use a frequency-dependent electro-optic technique to measure the hole mobility in small molecule organic semiconductors, such as 6,13 bis(triisopropylsilylethynyl)-pentacene. Measurements are made on semiconductor films in bottom gate,…

Materials Science · Physics 2012-12-20 Emily G. Bittle , Joseph W. Brill , Joseph P. Straley

We demonstrate the field-effect transistor (FET) operation of molecularly-thin anatase phase produced through solid state transformation from Ti0.87O2 nanosheets. Monolayer Ti0.87O2 nanosheet with a thickness of 0.7 nm is two-dimensional…

Materials Science · Physics 2017-08-31 S. Sekizaki , M. Osada , K. Nagashio
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