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We report on the fabrication and characterization of single crystal field-effect transistors (FETs) based on diphenylbenzo diselenophene (DPh-BDSe). These organic field-effect transistors (OFETs) function as p-channel accumulation-mode…

Materials Science · Physics 2009-11-10 R. Zeis , Ch. Kloc , K. Takimiya , Y. Kunugi , Y. Konda , N. Niihara , T. Otsubo

The field effect transistors (FETs) exhibited ultrahigh responsivity (107 A/W) to infrared light with great improvement of mobility in graphene / PbS quantum dot (QD) hybrid. These reported transistors are either unipolar or depletion mode…

Instrumentation and Detectors · Physics 2014-10-10 Ran Wang , Yating Zhang , Haiyang Wang , Xiaoxian Song , Lufan Jin , Haitao Dai , Sen Wu , Jianquan Yao

Paper is the ideal substrate for the development of flexible and environmentally sustainable ubiquitous electronic systems, which, combined with two-dimensional materials, could be exploited in many Internet-of-Things applications, ranging…

We demonstrate tunable solid state and flexible graphene field effect devices (FEDs) fabricated using a poly(methylmethacrylate) (PMMA) and lithium fluoride (LiF) composite dielectric. Increasing the concentration of LiF in the composite…

Mesoscale and Nanoscale Physics · Physics 2016-05-03 Arunandan Kumar , Priyanka Tyagi , Ritu Srivastava

As high-performance organic semiconductors, {\pi}-conjugated polymers have attracted much attention due to their charming advantages including low-cost, solution processability, mechanical flexibility, and tunable optoelectronic properties.…

Materials Science · Physics 2021-02-09 Lixing Luo , Wanning Huang , Canglei Yang , Jing Zhang , Qichun Zhang

Metal oxide thin-film transistors are fast becoming a ubiquitous technology for application in driving backplanes of organic light-emitting diode displays. Currently all commercial products rely on metal oxides processed via physical vapor…

Long-range moire patterns in twisted WSe2 enable a built-in, moire-length-scale ferroelectric polarization that can be directly harnessed in electronic devices. Such a built-in ferroic landscape offers a compelling means to enable…

Materials Science · Physics 2025-12-10 Arup Singha , Shaili Sett , Kenji Watanabe , Takashi Taniguchi , Arindam Ghosh , Rahul Debnath

Organic electrochemical transistors (OECTs) are key bioelectronic devices, with applications in neuromorphics, sensing, and flexible electronics. However, their microfabrication typically relies on precious metal contacts manufactured via…

We have demonstrated atomically thin, quantum capacitance-limited, field-effect transistors (FETs) that enable the detection of pH changes with ~75-fold higher sensitivity (4.4 V/pH) over the Nernst value of 59 mV/pH at room temperature…

A simple laser scribing process has been developed to fabricate low-voltage junctionless in-plane-gate thin-film transistors (TFTs) arrays without any mask and photolithography. Such junctionless TFTs feature that the channel and the…

Materials Science · Physics 2012-04-12 Li Qiang Zhu , Guo Dong Wu , Hong Liang Zhang , Ju Mei Zhou , Qing Wan

A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron…

Mesoscale and Nanoscale Physics · Physics 2012-05-17 Benoît Roche , Benoit Voisin , Xavier Jehl , Romain Wacquez , Marc Sanquer , Maud Vinet , Veeresh Deshpande , Bernard Previtali

Thickness engineered tunneling field-effect transistors (TE-TFET) as a high performance ultra-scaled steep transistor is proposed. This device exploits a specific property of 2D materials: layer thickness dependent energy bandgap (Eg).…

Mesoscale and Nanoscale Physics · Physics 2017-03-08 Fan W. Chen , Hesameddin Ilatikhameneh , Tarek A. Ameen , Gerhard Klimeck , Rajib Rahman

The use of SrTiO$_3$ dielectrics as high-permittivity insulator in organic thin film field effect transistors (FET) is evaluated. Field-effect transistors with sputtered SrTiO$_3$ and copper-phthalocyanine (CuPc) as semiconducting layer…

Materials Science · Physics 2015-05-27 F. Roth , M. Huth

The development of next generation medicines demand more sensitive and reliable label free sensing able to cope with increasing needs of multiplexing and shorter times to results. Field effect transistor-based biosensors emerge as one of…

Applied Physics · Physics 2019-05-22 Serena Rollo , Dipti Rani , Renaud Leturcq , Wouter Olthuis , César Pascual García

We present an overview of recent studies of the charge transport in the field effect transistors on the surface of single crystals of organic low-molecular-weight materials. We first discuss in detail the technological progress that has…

Other Condensed Matter · Physics 2009-11-10 R. W. I. de Boer , M. E. Gershenson , A. F. Morpurgo , V. Podzorov

In recent years, thin-film organic field-effect transistors (OFETs) have begun to be considered as a possible alternative to the hydrogenated amorphous silicon thin-film transistors (a-Si:H TFT's) used in active matrix flat panel displays…

The development of flexible electronics operating at radio-frequencies (RF) requires materials that combine excellent electronic performance and the ability to withstand high levels of strain. In this work, we fabricate graphene…

Mesoscale and Nanoscale Physics · Physics 2013-02-07 Nicholas Petrone , Inanc Meric , James Hone , Kenneth L. Shepard

We report on the fabrication and characterization of single-crystal organic p-type field-effect transistors (OFETs) with the field-effect hole mobility mu \~ 8 cm2/Vs, substantially higher than that observed in thin-film OFETs. The…

Strongly Correlated Electrons · Physics 2009-11-10 V. Podzorov , S. E. Sysoev , E. Loginova , V. M. Pudalov , M. E. Gershenson

Ten years have passed since the beginning of graphene research. In this period we have witnessed breakthroughs both in fundamental and applied research. However, the development of graphene devices for mass production has not yet reached…

Mesoscale and Nanoscale Physics · Physics 2016-02-19 N. C. S. Vieira , J. Borme , G. Machado , F. Cerqueira , P. P. Freitas , V. Zucolotto , N. M. R. Peres , P. Alpuim

We present a scaling theory of two-dimensional (2D) field effect transistors (FETs). For devices with channel thickness less than 4 nm, the device electrostatics is dominated by the physical gate oxide thickness and not the effective oxide…

Mesoscale and Nanoscale Physics · Physics 2021-05-25 Saurabh V. Suryavanshi , Chris D. English , H. -S. P. Wong , Eric Pop