Related papers: Characteristics of Interlayer Tunneling Field Effe…
Field-effect transistors based on band-to-band tunneling (BTBT) have gained a lot of recent interest due to their potential for reducing power dissipation in integrated circuits. In this paper we present a detailed performance comparison…
Tunnel Field Effect Transistors (TFET) have extremely low leakage current, exhibit excellent subthreshold swing and are less susceptible to short channel effects. However, TFETs do face certain special challenges, particularly with respect…
Application of Bardeen's tunneling theory to magnetic tunnel junctions having a general degree of atomic disorder reveals the close relationship between magneto-conduction and voltage-driven pseudo-torque, as well as the thickness…
A theory of transport in the quantum Hall regime is developed for separately contacted double-layer electron systems. Inter-layer tunneling provides a channel for equilibration of the distribution functions in the two layers at the edge…
Van der Waals (vdW) heterostructures have opened new opportunities to develop atomically thin (opto)electronic devices with a wide range of functionalities. The recent focus on manipulating the interlayer twist angle has led to the…
On the basis of the Keldysh method of non-equilibrium systems, we develop a theory of electron tunneling in normal-metal/superconductor junctions. By using the tunneling Hamiltonian model (being appropriate for the tight-binding systems),…
With the further scaling of silicon MOSFETs becoming increasingly harder, the search for an alternative material became crucial. The electron device community found many of the answers in two dimensional materials, especially graphene. With…
We demonstrate a tunneling and rectification behavior in bilayer graphene. A stepped dielectric top gate creates a spatially modulated electric field, which opens the band gap in the graphene and produces an insulating region at the p-n…
Tunneling field-effect transistors (TFETs) have gained a great deal of recent interest due to their potential to reduce power dissipation in integrated circuits. One major challenge for TFETs so far has been achieving high drive currents,…
In recent years, a lot of scientific research effort has been put forth for the investigation of Transition Metal Dichalcogenides (TMDC) and other Two Dimensional (2D) materials like Graphene, Boron Nitride. Theoretical investigation on the…
Two-dimensional (2D) materials are particularly attractive to build the channel of next-generation field-effect transistors (FETs) with gate lengths below 10-15 nm. Because the 2D technology has not yet reached the same level of maturity as…
Tunnel field effect transistor (TFET) devices are attractive as they show good scalability and have very low leakage current. However they suffer from low on-current and high threshold voltage. In order to employ the TFET for circuit…
The magnetic field effect in the Josephson tunneling between two d-wave superconductors are investigated. When the crystal orientation of one (or each) superconductor relative to the interface normal is such that midgap states exist at the…
We present a method capable of calculating elastic scanning tunneling microscopy (STM) currents from localized atomic orbital density functional theory (DFT). To overcome the poor accuracy of the localized orbital description of the wave…
The tunneling between two parallel two-dimensional electron gases has been investigated as a function of temperature $T$, carrier density $n$, and the applied perpendicular magnetic field $B$. In zero magnetic field the equilibrium resonant…
A theory of transport in the quantum Hall regime is developed for separately contacted double-layer electron systems. Inter-layer tunneling provides a channel for equilibration of the distribution functions in the two layers and influences…
Resistance switching in multilayer structures are typically based on materials possessing ferroic orders. Here we predict an extremely large resistance switching based on the relative spin-orbit splitting in twisted transition metal…
In the paper the version of the field effect tunnel nano transistor on quantum well is researched, where the control voltage is applied to the barriers surrounding the quantum well, and electron drain comes from the quantum well. Electrons…
In twisted bilayer graphene (TBLG), chiral tunneling can be tuned by parameters such as the twist angle, barrier height, and Fermi energy. This differs from the tunneling behavior observed in monolayer and Bernal bilayer graphene, where…
We study the effect of interlayer tunneling in the gauge theory describing a quasi-two-dimensional paramagnetic metal close to a second-order or weakly first-order antiferromagnetic phase boundary. In that theory, two species of fermions…