Related papers: Characteristics of Interlayer Tunneling Field Effe…
Tunnel field effect transistors (TFETs) utilizing semiconductor heterojunctions have shown promise for low energy logic but presently do not display subthreshold swings steeper than the room-temperature thermal limit of 60 mV/decade. These…
Topological insulator field-effect transistors (TIFETs) built on 2-D quantum spin Hall insulators are being considered as advanced logic transistors due to their potentially superior performance originating from the dissipationless edge…
Time-dependent density-functional theory (TDDFT) is widely used to describe electronic excitations in complex finite systems with large numbers of atoms, such as biomolecules and nanocrystals. The first part of this paper will give a simple…
We develop a device model for p-i-n tunneling transit-time diodes based on single- and multiple graphene layer structures operating at the reverse bias voltages. The model of the graphene tunneling transit-time diode (GTUNNETT) accounts for…
A formula suitable for a quantitative evaluation of the tunneling effect in a ferromagnetic particle is derived with the help of the instanton method. The tunneling between n-th degenerate states of neighboring wells is dominated by a…
In their original formulation of superconductivity, the London brothers predicted the exponential suppression of an $electrostatic$ field inside a superconductor over the so-called London penetration depth, $\lambda_L$. Despite a few…
In this work, we propose the Bilayer Graphene Tunnel Field Effect Transistor (BG-TFET) as a device suitable for fabrication and circuit integration with present-day technology. It provides high Ion/Ioff ratio at ultra-low supply voltage,…
In this paper we extend our earlier analysis of the novel Josephson effect in triplet superconductor--ferromagnet--triplet superconductor (TFT) junctions [B. Kastening \emph{et al.}, Phys. Rev. Lett. {\bf{96}}, 047009 (2006)]. In our more…
We study theoretically the electron current across a monolayer graphene/hexagonal boron nitride/bilayer graphene tunnelling junction in an external magnetic field perpendicular to the layers. We show that change in effective tunnelling…
The transfer Hamiltonian tunneling current is derived in a time-dependent density matrix formulation and is used to examine photon-assisted tunneling. Bardeen's tunneling expression arises as the result of first order perturbation theory in…
We show that interlayer current induces topological superconductivity in twisted bilayers of nodal superconductors. A bulk gap opens and achieves its maximum near a ``magic'' twist angle $\theta_\mathrm{MA}$. Chiral edge modes lead to a…
Interlayer tunneling measurements in the strongly correlated bilayer quantized Hall phase at $\nu_T=1$ are reported. The maximum, or critical current for tunneling at $\nu_T=1$, is shown to be a well-defined global property of the coherent…
In this paper, we propose the application of a Dual Material Gate (DMG) in a Tunnel Field Effect Transistor (TFET) to simultaneously optimize the on-current, the off-current and the threshold voltage, and also improve the average…
Thermoelectrical properties are frequently used to characterize the materials and endow the free energy from wasted heat for useful purposes. Here, we show that linear thermoelectric effects in tunnel junctions with Fe-based…
A quantum statistical theory of spin-dependent tunneling through asymmetric magnetic double barrier junctions is presented which describes $both$ ballistic and diffuse tunneling by a single analytical expression. It is evidenced that the…
We report interlayer tunneling measurements between very dilute two-dimensional GaAs hole layers. Surprisingly, the shape and temperature-dependence of the tunneling spectrum can be explained with a Fermi liquid-based tunneling model, but…
Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are of potential to use in…
We study the Josephson effect of a $\rm{T_1 F T_2}$ junction, consisting of spin-triplet superconductors (T), a weak ferromagnetic metal (F), and ferromagnetic insulating interfaces. Two types of the triplet order parameters are considered;…
We have measured the tunneling between two two-dimensional electron gases at high magnetic fields $B$, when the carrier densities of the two electron layers are matched. For filling factors $\nu<1$, there is a gap in the current-voltage…
Full-band atomistic quantum transport simulations based on first principles are employed to assess the potential of band-to-band tunneling FETs (TFETs) with a 2-D channel material as future electronic circuit components. We demonstrate that…