Related papers: Characteristics of Interlayer Tunneling Field Effe…
The tunneling effect of two-dimensional Dirac fermions in a constant magnetic field is studied. This can be done by using the continuity equation at some points to determine the corresponding reflexion and transmission coefficients. For…
A heterojunction tunneling field effect transistor based on armchair graphene nanoribbons is proposed and studied using ballistic quantum transport simulation based on 3D real space nonequilibrium Green's function formalism. By using low…
Two infinite, two-dimensional, lattice, free fermion systems, initially in different invariant states, are allowed to communicate via two point contacts, through which direct tunneling of fermions takes place. Calculations of the local…
Theoretical and experimental studies have supported that the electronic structure of $\alpha$-(BEDT-TTF)$_2$I$_3$ under pressure is described by two-dimensional Dirac fermions. When the interlayer tunneling is coherent, the electronic…
The continuous down-scaling of transistors has been the key to the successful development of current information technology. However, with Moore's law reaching its limits, the development of alternative transistor architectures is urgently…
The traditional transmission coefficient present in the original Landauer formulation, which is valid for quasi-static scenarios with working frequencies below the inverse of the electron transit time, is substituted by a novel…
We study tunnel junctions consisting of a two-dimensional ferroelectric (FE) material sandwiched between graphene electrodes. We formulate a theory for the interplay of the FE polarization and induced free charges in such devices, taking…
The thesis explores calculating tunneling current densities between planar conducting electrodes in an STM. It considers factors like bias voltages and the separation between electrodes, using Fermi energy and work functions. Pauli blocking…
The Discovery of giant tunnel electroresistance (TER) in Ferroelectric Tunnel Junction (FTJ) paves a futuristic possibility of utilizing the FTJ as a bistable resistive device with an enormously high ON/OFF ratio. In the last 20 years,…
Dual-material double-gate tunnel field effect transistor (DMDG TFET) is a promising candidate for low-power, high-speed electronics due to enhanced electrostatic control and superior switching characteristics. Integrating a pocket region…
Many of the experiments in twisted bilayer graphene (TBG) differ from each other in terms of the details of their phase diagrams. Few controllable aspects aside, this discrepancy is largely believed to be arising from the presence of a…
Hybrid graphene-topological insulator (TI) devices were fabricated using a mechanical transfer method and studied via electronic transport. Devices consisting of bilayer graphene (BLG) under the TI Bi$_2$Se$_3$ exhibit differential…
Van der Waals multiferroic tunnel junctions (vdW-MFTJs) with multiple nonvolatile resistive states are highly suitable for new physics and next-generation storage electronics. However, currently reported vdW-MFTJs are based on two types of…
We study tunneling between a localized defect state and a conduction band in the presence of strong electron-electron and electron-phonons interactions. We derive the tunneling rate as a function of the position of the defect energy level…
Novel intrinsic two-dimensional materials have attracted many researchers' attention. The unusual transport and optical properties of these materials originate mainly from triangular lattices (TLs). Therefore, the application of energy…
Ferroelectric tunnel junctions (FTJs), which consist of two metal electrodes separated by a thin ferroelectric barrier, have recently aroused significant interest for technological applications as nanoscale resistive switching devices. So…
We investigate the thermoelectric properties of a hybrid nanodevice composed by a 2D carbon based material and a superconductor. This system presents nonlinear bipolar thermoelectricity as induced by the spontaneous breaking of the…
Using calibrated simulations, we report a detailed study of the doping-less tunnel field effect transistor (TFET) on a thin intrinsic silicon film using charge plasma concept. Without the need for any doping, the source and drain regions…
By means of numerical simulation, we study in this work the effects of uniaxial strain on transport properties of strained graphene heterojunctions and explore the possibility to achieve good performance of graphene transistors using these…
Theoretical studies of photochemical processes require a description of the energy surfaces of excited electronic states, especially near degeneracies, where transitions between states are most likely. Systems relevant to photochemical…