Related papers: Suppressing the cellular breakdown in silicon supe…
We formulate a multi-physics model to describe the nonlinear propagation of a femtosecond, near-infrared, tightly focused laser pulse in a transparent dielectric. The application of our model to the case of bulk sapphire shows that even…
The analytical solutions of the equations describing impurity diffusion due to migration of nonequilibrium impurity interstitials were obtained for the impurity redistribution during ion implantation at elevated temperatures and for…
Novel solar cell materials consisting of Si nanoparticles embedded in SiO2 layers have been studied using positron annihilation spectroscopy in Doppler broadening mode, and photoluminescence. Two positron-trapping interface states are…
In a system consisting of two different lattices, the structural stability is ensured when an epitaxial relationship occurs between them and allows the system to retain the stress, avoiding the formation of a polycristalline film. The…
The effects of ultra-short laser pulses on reactive Ti/Al nano-layered thin film were investigated. The thin film composed of alternated titanium and aluminium nano-layers, was deposited by ion-sputtering. Single pulse irradiation was…
Featured with a plethora of electric and magnetic Mie resonances, high index dielectric nanostructures offer a versatile platform to concentrate light-matter interactions at the nanoscale. By integrating unique features of far-field…
The lack of straightforward epitaxial integration of useful telecom lasers on silicon remains the major bottleneck for bringing optical interconnect technology down to the on-chip level. Crystalline silicon itself, an indirect…
The effect of lattice termination on the surface states in a two-dimensional truncated photonic crystal slab is experimentally studied in a high index contrast silicon-on-insulator system. A single-mode silicon strip waveguide that is…
We report on the fabrication of two-dimensional periodic photonic nanostructures by nanoimprint lithography and dry etching, and their integration into a 1-{\mu}m-thin mono-crystalline silicon solar cell. Thanks to the periodic…
In this article, we investigate the effect of prolonged light exposure on silicon heterojunction solar cells. We show that, although light exposure systematicallyimproves solar cell efficiency in the case of devices using intrinsic and…
Hyperdoping, overcoming the solubility limit of dopants in a crystalline semiconductor, is a fertile method for the enhancement of the electrical, structural and optical devices' performances and for the exploration of exotic phases such as…
Superconducting topological crystalline insulators (TCI) are predicted to host new topological phases protected by crystalline symmetries, but available materials are insufficiently suitable for surface studies. To induce superconductivity…
One of the remaining obstacles to approaching the theoretical efficiency limit of crystalline silicon (c-Si) solar cells is the exceedingly high interface recombination loss for minority carriers at the Ohmic contacts. In ultra-thin-film…
It has been recently reported (S. Lee et al., Nature Materials 12, 392, 2013) that superlattices where layers of the 8% Co-doped BaFe2As2 superconducting pnictide are intercalated with non superconducting ultrathin layers of either SrTiO3…
During the formation of Si nanocrystals (Si NC) in Si$_x$C$_{1-x}$ layers via solid-phase crystallization, the unintended formation of nanocrystalline SiC reduces the minority carrier lifetime and therefore the performance of…
As it is known from visible light experiments, silicon under femtosecond pulse irradiation can undergo the so-called 'nonthermal melting' if the density of electrons excited from the valence to the conduction band overcomes a certain…
Atomistic computer simulations are applied to investigate the atomic structure, thermal stability, and diffusion processes in Al-Si interphase boundaries as a prototype of metal-ceramic interfaces in composite materials. Some of the most…
A theoretical investigation of the microscopic mechanisms provided the transient enhanced diffusion of boron atoms during rapid thermal annealing of silicon substrates doped by high fluence ion implantation was carried out. To compare the…
Molecular beam epitaxy is used to grow TiSe2 ultrathin films on graphitized SiC(0001) substrate. TiSe2films proceed via a nearly layer-by-layer growth mode and exhibit two dominant types of defects, identified as Se vacancy and…
Silicon is an excellent material for microelectronics and integrated photonics with untapped potential for mid-IR optics. Despite broad recognition of the importance of the third dimension, current lithography methods do not allow…