In a system consisting of two different lattices, the structural stability is ensured when an epitaxial relationship occurs between them and allows the system to retain the stress, avoiding the formation of a polycristalline film. The phenomenon occurs if the film thickness does not exceed a critical value. Here we show that, in spite of its orthorombic structure, a 14nm-thick NiSi layer can three-dimensionally (3D) adapt to the cubic Si lattice by forming transrotational domains. Each domain arises by the continuous bending of the NiSi lattice, maintaining a close relationship with the substrate structure. The presence of transrotational domains does not cause a roughening of the layer but instead it improves the structural and electrical stability of the silicide in comparison with a 24nm-thick layer formed using the same annealing process. These results have relevant implications on thickness scaling of NiSi layers currently used as metallizations of electronic devices.
@article{arxiv.cond-mat/0510660,
title = {Pseudoepitaxial transrotational structures in 14 nm-thick NiSi layers on [001] silicon},
author = {Alessandra Alberti and Corrado Bongiorno and Brunella Cafra and Giovanni Mannino and Emanuele Rimini and Till Metzger and Cristian Mocuta and Thorsten Kammler and Thomas Feudel},
journal= {arXiv preprint arXiv:cond-mat/0510660},
year = {2007}
}