English

Si nanoparticle interfaces in Si/SiO2 solar cell materials

Materials Science 2011-06-10 v1

Abstract

Novel solar cell materials consisting of Si nanoparticles embedded in SiO2 layers have been studied using positron annihilation spectroscopy in Doppler broadening mode, and photoluminescence. Two positron-trapping interface states are observed after high temperature annealing at 1100{\deg}C. One of the states is attributed to the (SiO2/Si bulk) interface and the other to the interface between the Si nanoparticles and SiO2. A small reduction in positron trapping into these states is observed after annealing the samples in N2 atmosphere with 5% H2. Enhanced photoluminescence is also observed from the samples following this annealing step.

Keywords

Cite

@article{arxiv.1106.1753,
  title  = {Si nanoparticle interfaces in Si/SiO2 solar cell materials},
  author = {S. Kilpelainen and Y. -W. Lu and F. Tuomisto and J. Slotte and A. Nylandsted Larsen},
  journal= {arXiv preprint arXiv:1106.1753},
  year   = {2011}
}

Comments

4 pages, 4 figures

R2 v1 2026-06-21T18:19:51.759Z