Related papers: Suppressing the cellular breakdown in silicon supe…
We report on a systematic study of the growth of epitaxial TiO2 films deposited by pulsed laser deposition on Ti-terminated (001) SrTiO3 single crystals. By using in-situ reflection high energy electron diffraction, low energy electron…
Presently, silicon photonics requires photodetectors that are sensitive in a broad infrared range, can operate at room temperature, and are suitable for integration with the existing Si-technology process. Here, we demonstrate strong…
The binary alloy of titanium-tungsten (TiW) is an established diffusion barrier in high-power semiconductor devices, owing to its ability to suppress the diffusion of copper from the metallisation scheme into the surrounding silicon…
Passivating lithium ion battery electrode surfaces to prevent electrolyte decomposition is critical for battery operations. Recent work on conformal atomic layer deposition (ALD) coating of anodes and cathodes has shown significant…
Simultaneous measurements of transient transmission and reflectivity were performed in the unintentionally doped InN film to reveal ultrafast optical bleaching and its recovery behavior under intense laser irradiation. The optical bleaching…
The Si(001) surface morphology during ion sputtering at elevated temperatures and solid phase epitaxy following ion sputtering at room temperature has been investigated using scanning tunneling microscopy. Two types of antiphase boundaries…
This paper presents the experimental results on research of growth processes of GaAs layers on silicon substrates by molecular beam epitaxy. The formation of buffer Si layer in a single growth process has been found to significantly improve…
Superconducting germanium films are an intriguing material for possible applications in fields such as cryogenic electronics and quantum bits. Recently, there has been great deal of progress in hyperdoping of Ga doped Ge using ion…
A new phenomenon of enhancing the relativistic transparency of overdense plasmas by the influence of hot-electron refluxing has been found via particle-in-cell simulations. When a p-polarized laser pulse, with intensity below the…
For electrical spin injection and detection of spin-polarized electrons in silicon, we explore highly epitaxial growth of ferromagnetic full-Heusler-alloy Co2FeSi thin films on silicon substrates using low-temperature molecular beam epitaxy…
UV laser annealing (UV-LA) enables surface-localized high-temperature thermal processing to form abrupt junctions in emerging monolithically stacked devices, where applicable thermal budget is restricted. In this work, UV-LA is performed to…
We have studied the propagation of fast electrons through laser irradiated Ti foils by monitoring the emission of hard X-rays and K-{\alpha} radiation from bare foils and foils backed by a thick epoxy layer. Key observations include strong…
Metastable wurtzite crystal phases of semiconductors comprise enormous potential for high-performance electro-optical devices, owed to their extended tunable direct band gap range. However, synthesizing these materials in good quality and…
Low temperature epitaxial breakdown of inhomogeneously strained Si capping layers is investigated. By growing Si films on coherently strained GeSi quantum dot surfaces, we differentiate effects of surface roughness, strain, and growth…
Silicon anodes offer high energy densities for next-generation lithium-ion batteries; however, their application is limited by severe volume expansion during cycling. Making silicon porous or nanostructured mitigates this expansion but…
Thin films of optimally-doped (001)-oriented YBa2Cu3O7-{\delta} are epitaxially integrated on silicon (001) through growth on a single crystalline SrTiO3 buffer. The former is grown using pulsed-laser deposition and the latter is grown on…
Doping of silicon via phosphene exposures alternating with molecular beam epitaxy overgrowth is a path to Si:P substrates for conventional microelectronics and quantum information technologies. The technique also provides a new and…
Pulsed laser deposition, a non-equilibrium thin-film growth technique, was used to stabilize metastable tetragonal iron sulfide (FeS), the bulk state of which is known as a superconductor with a critical temperature of 4 K. Comprehensive…
Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semiconductor/superconductor hybrids have appeared as an important…
Uniform, defect-free crystal interfaces and surfaces are crucial ingredients for realizing high-performance nanoscale devices. A pertinent example is that advances in gate-tunable and topological superconductivity using…