Related papers: Suppressing the cellular breakdown in silicon supe…
A stack of titanium foils was irradiated with 136 MeV 136Xe to study microstructure damage and phase stability of titanium upon irradiation. X- ray diffraction, scanning electron microscopy/energy dispersive spectroscopy and atomic force…
The model of transient enhanced diffusion of ion-implanted As is formulated and the finite-difference method for numerical solution of the system of equations obtained is developed. The nonuniform distribution of point defects near the…
Electrochemical etching of silicon in hydrofluoride containing electrolytes leads to pore formation for low and to electropolishing for high applied current. The transition between pore formation and polishing is accompanied by a change of…
A convenient method has been developed to thin electron beam fabricated Silicon nanopillars under controlled surface manipulation by transforming the surface of the pillars to an oxide shell layer followed by the growth of sacrificial…
The Solid-Electrolyte Interphase, SEI, formed on a battery electrode has been a central area of research for decades. This thin, complex layer profoundly impacts the electrochemical deposition morphology and stability of the metal in…
Submicron core/shell Ti/TiOx photocatalyst is successfully synthesized via single-mode magnetic microwave (SMMW) assisted direct oxidation of planetary ball-milled TiH2. The thickness of TiOx shell including highly concentrated defects such…
Theoretically and experimentally we have proved the existence of optimal thickness of the porous layer used as an anti-reflection coating in solar cells. We have taken into account the joint mechanisms of generation and recombination of…
Si/SiGe heterostructures are of high interest for high mobility transistor and qubit applications, specifically for operations below 4.2 K. In order to optimize parameters such as charge mobility, built-in strain, electrostatic disorder,…
Silicon carbide (SiC) is a highly promising material for the rapidly growing UV detection industry due to its visible-blindness, low dark current, and exceptional thermal and chemical stability. Despite these advantages, the performance of…
Diffusion mediated interaction in metal-substrate assembly during high temperature annealing leads to possible formation of new composite materials. Here, sputtered grown Ti films on Si3N4/Si substrate has been reported to produce titanium…
The structural and magnetic properties of the as-cast and annealed V$_{0.6-x}$Si$_x$Ti$_{0.4}$ ($x$ = 0, 0.05, 0.10, 0.15) alloy superconductors are reported here. It is found that addition of silicon to the V-Ti alloys results in eutectic…
Li-ion batteries contain excess anode area to improve manufacturability and prevent Li plating. These overhang areas in graphite electrodes are active but experience decreased Li+ flux during cycling. Over time, the overhang and the anode…
The formation of Ni(Pt)silicides on a Si(001) surface is investigated using an ab initio approach. After deposition of a Ni overlayer alloyed with Pt, the calculations reveal fast diffusion of Ni atoms into the Si lattice, which leads…
Using atomic resolved scanning tunneling microscopy, we present here the experimental evidence of a silicene sheet (graphene like structure) epitaxially grown on a close-packed silver surface (Ag(111)). This has been achieved via direct…
Numerous experimental data on the rapid solidification of binary systems exhibit the formation of metastable solid phases with the initial (nominal) chemical composition. This fact is explained by complete solute trapping leading to…
Photonic crystal (PhC) cavities are promising candidates for Si photonics integrated circuits due to their ultrahigh quality (Q)-factors and small mode volumes. Here, we demonstrate a novel concept of a one-dimensional hybrid III-V/Si PhC…
We investigated the complex interaction between a nickel layer and a 4H-SiC substrate under UV-laser irradiation since the early stages of the atomic inter-diffusion. An exhaustive description is still lacking in the literature. A…
Several ten $\mu$m GaN have been deposited on a silicon substrate using a two-step hydride vapor phase epitaxy (HVPE) process. The substrates have been covered by AlN layers and GaN nanostructures grown by plasma-assisted molecular-beam…
Molecular beam epitaxy enables the growth of thin film materials with novel properties and functionalities. Typically, the lattice constants of films and substrates are designed to match to minimise disorders and strains. However,…
Solid phase epitaxy is a crystallization technique used to produce high quality thin films. Lateral solid phase epitaxy furthermore enables the realization of non-planar structures, which are interesting, e.g., in the field of spintronics.…