Related papers: Scalable gate architecture for densely packed semi…
Silicon spin qubits in gate-defined quantum dots leverage established semiconductor infrastructure and offer a scalable path toward transformative quantum technologies. Holes spins in silicon offer compact all-electrical control, whilst…
We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and…
The similarities between gated quantum dots and the transistors in modern microelectronics - in fabrication methods, physical structure, and voltage scales for manipulation - have led to great interest in the development of quantum bits…
Controlling decoherence is the most challenging task in realizing quantum information hardware. Single electron spins in gallium arsenide are a leading candidate among solid- state implementations, however strong coupling to nuclear spins…
Single nuclear spins in silicon are a promising resource for quantum technologies due to their long coherence times and excellent control fidelities. Qubits and qudits have been encoded on donor nuclei, with successful demonstrations of…
We demonstrate dispersive charge sensing of Si/SiGe single and double quantum dots (DQD) by coupling sub-micron floating gates to a radio frequency reflectometry (rf-reflectometry) circuit using the tip of an atomic force microscope (AFM).…
The central challenge of quantum computing is implementing high-fidelity quantum gates at scale. However, many existing approaches to qubit control suffer from a scale-performance trade-off, impeding progress towards the creation of useful…
With one- and two-qubit gate fidelities approaching the fault-tolerance threshold for spin qubits in silicon, how to scale up the architecture and make large arrays of spin qubits become the more pressing challenges. In a scaled-up…
We perform quantum Hall measurements on three types of commercially available modulation doped Si/SiGe heterostructures to determine their suitability for depletion gate defined quantum dot devices. By adjusting the growth parameters, we…
We propose and demonstrate a relaxed-SiGe/strained-Si (SiGe/s-Si) enhancement-mode gate stack for quantum dots. The enhancement-mode SiGe/s-Si structure is pursued because it spaces the quantum dot away from charge and spin defect rich…
We experimentally demonstrate a tunable hybrid qubit in a five-electron GaAs double quantum dot. The qubit is encoded in the (1,4) charge regime of the double dot and can be manipulated completely electrically. More importantly, dot…
Single-spin qubits in semiconductor quantum dots proposed by Loss and DiVincenzo (LD qubits) hold promise for universal quantum computation with demonstrations of a high single-qubit gate fidelity above 99.9 % and two-qubit gates in…
The connectivity within single carrier information-processing devices requires transport and storage of single charge quanta. Our all-electrical Si/SiGe shuttle device, called quantum bus (QuBus), spans a length of 10 $\mathrm{\mu}$m and is…
We report high qubit coherence as well as low crosstalk and single-qubit gate errors in a superconducting circuit architecture that promises to be tileable to 2D lattices of qubits. The architecture integrates an inductively shunted cavity…
Silicon spin qubits show great promise as a scalable qubit platform for fault-tolerant quantum computing. However, fast high-fidelity readout of charge and spin states, which is required for quantum error correction, has remained elusive.…
Charge or spin-qubits can be realized by using gate-defined quantum dots (QDs) in semiconductors in a similar fashion to the processes used in CMOS for conventional field-effect transistors or more recent fin FET technology. However, to…
Semiconductor quantum dots in silicon are promising qubits because of long spin coherence times and their potential for scalability. However, such qubits with complete electrical control and fidelities above the threshold for quantum error…
Electron spin qubits in silicon are a promising platform for fault-tolerant quantum computing. Low-frequency noise, including nuclear spin fluctuations and charge noise, is a primary factor limiting gate fidelities. Suppressing this noise…
Spin qubits need to operate within a very precise voltage space around charge state transitions to achieve high-fidelity gates. However, the stability diagrams that allow the identification of the desired charge states are long to acquire.…
Qubit readout schemes often deviate from ideal projective measurements, introducing critical issues that limit quantum computing performance. In this work, we model charge-sensing-based readout for semiconductor spin qubits in double…