Related papers: Nanoripple formation on GaAs (001) surface by reve…

We observe using low-energy electron microscopy the self-assembly of monolayer-thick stripes of Au on W(110) near the transition temperature between stripes and the non-patterned (homogeneous) phase. We demonstrate that the amplitude of…

Understanding the evolution of structure and functionality through amorphous to crystalline phase transitions is critical for predicting and designing devices for application in extreme conditions. Here, we consider both aspects of…

The effect of film morphology on its surface chemistry and band structure has been analyzed for gallium nitride epitaxial films grown by molecular beam epitaxy. The film morphology has been studied using scanning electron microscopy and…

For chiral liquid crystals that express topologically protected defects and thermally driven mechanical rotation, the size- and temperature-driven reversal of the rotational direction of their droplets was demonstrated even under a fixed…

The annealing-induced formation of (Mn,Ga)As nanocrystals in (Ga,Mn)As/GaAs superlattices was studied by X-ray diffraction, transmission electron microscopy and magnetometry. The superlattice structures with 50 A thick (Ga,Mn)As layers…

We investigate the influence of modified growth conditions during the spontaneous formation of GaN nanowires on Si(111) in plasma-assisted molecular beam epitaxy. We find that a two-step growth approach, where the substrate temperature is…

We report Ru L$_3$-edge resonant X-ray diffraction studies on single crystal and (001) epitaxial films of RuO$_2$. We investigate the distinct $\mathbf{Q} = (100)$ and $(001)$ reflections as a function of incident energy, azimuthal angle,…

Hemispherical amorphous silicon nanoparticles exhibit asymmetric optical scattering for forward illumination (base-to-apex) and backward illumination (apex-to-base). There exists an anapole mode only for backward propagation, not for…

Pentacene is known to grow on isotropic silicon oxide surfaces in a substrate-induced phase with fiber textured crystallites. This growth study reports on the growth of pentacene crystallites on uniaxially oriented surfaces. Silica…

Nonequilibrium plasmas generated by spark discharges induce chemical, thermal, and flow dynamic effects that are beneficial in many applications such as plasmalysis, plasma-assisted combustion, and plasma flow control. Among the flow…

We demonstrate Au-assisted vapor-solid-solid (VSS) growth of Ge nanowires (NWs) by molecular beam epitaxy (MBE) at 220 {\deg}C, which is compatible with the temperature window for Si-based integrated circuit. Low temperature grown Ge NWs…

We investigated the thermal evolution of the magnetic properties of MnAs epitaxial films grown on GaAs(001) during the coexistence of hexagonal/orthorhombic phases using polarized resonant (magnetic) soft X-ray scattering and magnetic force…

Periodic structures of GdN particles encapsulated in a single crystalline GaN matrix were prepared by plasma assisted molecular beam epitaxy. High resolution X-ray diffractometery shows that GdN islands, with rock salt structure are…

With the aim of investigating the possible integration of opto-electronic devices, epitaxial GaN layers have been grown on Si(111) SOI and on Si/CoSi2/Si(111) using metalorganic chemical vapor deposition. The samples are found to possess a…

Au-Cu bimetallic nanoparticles (NPs) grown on TiO 2 (110) have been followed in-situ using grazing incidence x-ray diffraction and x-ray photoemission spectroscopy from their synthesis to their exposure to a CO/O 2 mixture at low pressure…

Ion-beam irradiation of an amorphizable material such as Si or Ge may lead to spontaneous pattern formation, rather than flat surfaces, for irradiation beyond some critical angle against the surface normal. It is observed experimentally…

We report the studies of ultrafast electron nanocrystallography on size-selected Au nanoparticles (2-20 nm) supported on a molecular interface. Reversible surface melting, melting, and recrystallization were investigated with dynamical…

As-rich GaAs (001) surfaces are successfully observed during As4-irradition by a system in which scanning tunneling microscopy (STM) and molecular beam epitaxy can be performed simultaneously. With a substrate temperature of 440 C and an…

Self assembled AlN nanowires (NWs) are grown by plasma assisted molecular beam epitaxy (PAMBE) on SiO2 / Si (111) substrates. Using a combination of in-situ reflective high energy electron diffraction and ex situ X ray diffraction (XRD), we…

Nanoprobe X-ray diffraction (nXRD) using focused synchrotron radiation is a powerful technique to study the structural properties of individual semiconductor nanowires. However, when performing the experiment under ambient conditions, the…