Related papers: Nanoripple formation on GaAs (001) surface by reve…
The magnetic domain structure is studied in epitaxial Fe$_{100-x}$Ga$_x$/MgO(001) films with 0 $<$ x $<$ 30 and thicknesses below 60 nm by magnetic force microscopy. For low gallium content, domains with the magnetization lying in the film…
The dilute-nitride ternary compound GaP$_{1-x}$N$_{x}$ is highly attractive to monolithically integrate pseudomorphic red light-emitting devices and photovoltaic cells with the standard Si technology because it is lattice matched to Si with…
We present ion beam erosion experiments performed in ultra high vacuum using a differentially pumped ion source and taking care that the ion beam hits the Si(001) sample only. Under these conditions no ion beam patterns form on Si for…
The effects of shadowing in oblique incidence metal (100) epitaxial growth are studied using a simplified model. We find that many of the features observed in Cu(100) growth, including the existence of a transition from anisotropic mounds…
We have reported nanopattern formation on carbon thin film and Si(100) surfaces by low energy inert and carbon ion beams. It is interesting to observe the role of carbon as target as well as projectile for nano patterning. Using carbon thin…
Hexagonal boron nitride (hBN) has been grown on sapphire substrates by ultra-high temperature molecular beam epitaxy (MBE). A wide range of substrate temperatures and boron fluxes have been explored, revealing that high crystalline quality…
We report a time-reversal method based on the Richards-Wolf vectorial diffraction theory to generate transversely oriented optical M\"obius strips that wander around an axis perpendicular to the beam propagation direction. A number of sets…
The high cost of substrates for III-V growth can be cost limiting for technologies that require large semiconductor areas. Thus, being able to separate device layers and reuse the original substrate is highly desirable, but existing…
The use of highly efficient and solarblind GaN photocathodes as part of multichannel plate UV detectors for applications in astronomy would strongly benefit from the direct growth of GaN on typical window materials with high transmission…
The development of epitaxy techniques for localized growth of crystalline silicon nanofilms and nanostructures has been crucial to recent advances in electronics and photonics. A precise definition of the crystal growth location, however,…
We show that the decay of sinusoidal ripples on crystal surfaces, where mass transport is limited by the attachment and detachment of atoms at the step-edges, is remarkably different from the decay behavior that has been reported until now.…
Nano-rippled graphene, a structurally modified graphene, presents a novel material with a large range of possible applications including sensors, electrodes, coatings, optoelectronics, spintronics and straintronics. In this work we have…
Cubic GaN layers were grown by plasma-assisted molecular beam epitaxy on 3C-SiC (001)substrates. In situ reflection high energy electron diffraction was used to quantitatively determine the Ga coverage of the GaN surface during growth.…
(111) NiO epitaxial layers embedded with crystallographically oriented Ni-clusters are grown on c-GaN/Sapphire templates using pulsed laser deposition technique. Structural and magnetic properties of the films are examined by a variety of…
N-type doping of GaAs nanowires has proven to be difficult because the amphoteric character of silicon impurities is enhanced by the nanowire growth mechanism and growth conditions. The controllable growth of n-type GaAs nanowires with…
Ever since the discovery of graphene and subsequent explosion of interest in single atom thick materials, studying their mechanical properties has been an active area of research. New length scales often necessitate a rethinking of physical…
Charged pattern formation on the surfaces of self--assembled cylindrical micelles formed from oppositely charged heterogeneous molecules such as cationic and anionic peptide amphiphiles is investigated. The net incompatibility $\chi$ among…
Surface diffusion and surface electromigration may lead to a morphological instability of thin solid films and nanowires. In this paper two nonlinear analyses of a morphological instability are developed for a single-crystal cylindrical…
Shape transformations of partially capped self-assembled InAs quantum dots grown on InP are studied. Atomic force microscopy images show large anisotropic redistribution of the island material after coverage by a 1 nm thick InP layer. The…
We show that a homogeneous and isotropic slab, illuminated by a circularly polarized beam with no topological charge, produces vortices of order two in the opposite circularly polarized components of the reflected and transmitted fields, as…