Related papers: Write error rate of spin-transfer-torque random ac…

Spatial and temporal variability of HfOx-based resistive random access memory (RRAM) are investigated for manufacturing and product designs. Manufacturing variability is characterized at different levels including lots, wafers, and chips.…

Sequence-to-sequence models, such as attention-based models in automatic speech recognition (ASR), are typically trained to optimize the cross-entropy criterion which corresponds to improving the log-likelihood of the data. However, system…

We investigate the amplification of externally excited spin waves via the Spin-Transfer-Torque (STT) effect in combination with the Spin-Hall-Effect (SHE) employing short current pulses. The results reveal that, in the case of an…

We explore efficient estimation of statistical quantities, particularly rare event probabilities, for stochastic reaction networks. Consequently, we propose an importance sampling (IS) approach to improve the Monte Carlo (MC) estimator…

This application note discusses the working principle of spin-transfer torque magnetoresistive random access memory (STT-MRAM) and the impact that magnetic fields can have on STT-MRAM operation. Sources of magnetic field and typical…

Conventional low-power static random access memories (SRAMs) reduce read energy by decreasing the bit-line voltage swings uniformly across the bit-line columns. This is because the read energy is proportional to the bit-line swings. On the…

Processing-in-memory (PIM) reduces data transfer latency by rolling memory and logic elements into one compute location. As an emergent material candidate for such an architecture, we propose a strained Weyl semimetal based…

Automatic speech recognition (ASR) systems often encounter difficulties in accurately recognizing rare words, leading to errors that can have a negative impact on downstream tasks such as keyword spotting, intent detection, and text…

Dynamic Fault Trees (DFT) are widely adopted in industry to assess the dependability of safety-critical equipment. Since many systems are too large to be studied numerically, DFTs dependability is often analysed using Monte Carlo…

The application of Magnetic Random-Access Memory (MRAM) in computing-in-memory (CIM) has gained significant attention. However, existing designs often suffer from high energy consumption due to their reliance on complex analog circuits for…

The conventional computer architecture has been facing challenges answering the ever-increasing demands from emerging applications, such as AI, for energy-efficient computation and memory hardware systems. Computational Random Access Memory…

The word error rate (WER) of soft-decision-decoded binary block codes rarely has closed-form. Bounding techniques are widely used to evaluate the performance of maximum-likelihood decoding algorithm. But the existing bounds are not tight…

In this work, we propose an algorithm to simulate rare events for electronic circuit design. Our approach heavily relies on a smart use of importance sampling, which enables us to tackle probabilities of the magnitude 10 --10. Not only can…

We report theoretical investigation of the switching probability of electric field-induced precessional magnetization switching by solving the Fokker-Planck equation numerically with finite difference method. The switching probability is…

Offshoring the proprietary Intellectual property (IP) has recently increased the threat of malicious logic insertion in the form of Hardware Trojan (HT). A potential and stealthy HT is triggered with nets that switch rarely during regular…

Transformers, originally proposed for natural language processing (NLP) tasks, have recently achieved great success in automatic speech recognition (ASR). However, adjacent acoustic units (i.e., frames) are highly correlated, and…

We propose an improved scheme for low-power writing of binary bits in non-volatile (multiferroic) magnetic memory with electrically generated mechanical stress. Compared to an earlier idea [Tiercelin, et al., J. Appl. Phys., 109, 07D726…

The authors proposed and computationally analyzed nonvolatile static random access memory (NV-SRAM) architecture using metal-oxide-semiconductor field-effect transistor (MOSFET) type of spin-transistors referred to as pseudo-spin-MOSFET…

We show that the tunable gate voltage in n-doped AlGaAs/GaAs QW (quantum well) is a key in designing an efficient and ultrafast MRAM (magnetoresistive random access memory). The Rashba spin-orbit coupling in such QWs can be tuned…

Reinforcement Learning with Verifiable Rewards (RLVR) has achieved great success in developing Large Language Models (LLMs) with chain-of-thought rollouts for many tasks such as math and coding. Nevertheless, RLVR struggles with sample…