Related papers: Write error rate of spin-transfer-torque random ac…

Probabilistic computing using random number generators (RNGs) can leverage the inherent stochasticity of nanodevices for system-level benefits. The magnetic tunnel junction (MTJ) has been studied as an RNG due to its thermally-driven…

It is estimated that around 70 million people worldwide are affected by a speech disorder called stuttering. With recent advances in Automatic Speech Recognition (ASR), voice assistants are increasingly useful in our everyday lives. Many…

As one of the most promising emerging non-volatile memory (NVM) technologies, spin-transfer torque magnetic random access memory (STT-MRAM) has attracted significant research attention due to several features such as high density, zero…

Crossbar arrays using emerging non-volatile memory technologies such as Resistive RAM (ReRAM) offer high density, fast access speed and low-power. However the bandwidth of the crossbar is limited to single-bit read/write per access to avoid…

In this work, we present a novel non-volatile spin transfer torque (STT) assisted spin-orbit torque (SOT) based ternary content addressable memory (TCAM) with 5 transistors and 2 magnetic tunnel junctions (MTJs). We perform a comprehensive…

Memory devices operating due to the fast proton transfer (PT) process are proposed by means of the first-principles calculations. Writing an information is performed using the electrostatic potential of the scanning tunneling microscopy…

High-quality random numbers are very critical to many fields such as cryptography, finance, and scientific simulation, which calls for the design of reliable true random number generators (TRNGs). Limited by entropy source, throughput,…

We propose a general framework to compute the word error rate (WER) of ASR systems that process recordings containing multiple speakers at their input and that produce multiple output word sequences (MIMO). Such ASR systems are typically…

In this work, we propose a novel and efficient minimum word error rate (MWER) training method for RNN-Transducer (RNN-T). Unlike previous work on this topic, which performs on-the-fly limited-size beam-search decoding and generates…

Multilingual pretraining for transfer learning significantly boosts the robustness of low-resource monolingual ASR models. This study systematically investigates three main aspects: (a) the impact of transfer learning on model performance…

Many key electronic technologies (e.g., large-scale computing, machine learning, and superconducting electronics) require new memories that are fast, reliable, energy-efficient, and of low-impedance at the same time, which has remained a…

A new genre of Spin-Transfer Torque (STT) MRAM is proposed, in which bi-directional writing is achieved using thermoelectrically controlled magnonic current as an alternative to conventional electric current. The device uses a magnetic…

Estimating the probability of rare failure events is an essential step in the reliability assessment of engineering systems. Computing this failure probability for complex non-linear systems is challenging, and has recently spurred the…

True random number generators (TRNGs) are fundamental building blocks for many applications, such as cryptography, Monte Carlo simulations, neuromorphic computing, and probabilistic computing. While perpendicular magnetic tunnel junctions…

Agent memory systems accumulate experience but currently lack a principled operational metric for memory quality governance -- deciding which memories to trust, suppress, or deprecate as the agent's task distribution shifts. Write-time…

Processing-in-memory (PIM) turns out to be a promising solution to breakthrough the memory wall and the power wall. While prior PIM designs yield successful implementation of bitwise Boolean logic operations locally in memory, it is…

Electrical static random memory (E-SRAM) is the current standard for internal static memory in Field Programmable Gate Array (FPGA). Despite the dramatic improvement in E-SRAM technology over the past decade, the goal of ultra-fast,…

A high-speed random number generator (RNG) circuit based on magnetoresistive random-access memory (MRAM) using an error-correcting code (ECC) post processing circuit is presented. ECC post processing increases the quality of randomness by…

Measuring the performance of automatic speech recognition (ASR) systems requires manually transcribed data in order to compute the word error rate (WER), which is often time-consuming and expensive. In this paper, we continue our effort in…

This paper presents physical modeling and benchmarking for two-terminal spin-orbit torque magnetic random-access memory (2T-SOT-MRAM). The results indicate that the common SOT materials that provide only in-plane torque can provide little…