Related papers: Write error rate of spin-transfer-torque random ac…
Write asymmetry, the significantly different write current for high-to-low and low-to-high resistance switching because of natural stochastic behaviors of magnetization, is a fundamental issue in magnetic random-access memory (MRAM). For…
A new device structure for spin transfer torque based magnetic random access memory is proposed for on-chip memory applications. Our device structure exploits spin Hall effect to create a differential memory cell that exhibits fast and…
Progress in artificial intelligence and machine learning over the past decade has been driven by the ability to train larger deep neural networks (DNNs), leading to a compute demand that far exceeds the growth in hardware performance…
We theoretically investigate influences of electronic circuit delay, noise and temperature on write-error-rate (WER) in voltage-controlled magnetization switching operation of a magnetic-topological-insulator-based (MTI) device by means of…
Stochastic behaviors of resistive random access memory (RRAM) play an important role in the design of cross-point memory arrays. A Monte Carlo compact model of oxide RRAM is developed and calibrated with experiments on various device stack…
Spin-Torque-Transfer RAM (STTRAM) is a promising technology however process variation poses serious challenge to sensing. To eliminate bit-to-bit process variation we propose a reference-less, destructive slope detection technique which…
We describe a new approach to understanding and calculating magnetization switching rates and noise in the recently observed phenomenon of "spin-torque switching". In this phenomenon, which has possible applications to information storage,…
Emerging spin-torque (ST) phenomena may lead to ultra-low-voltage, high-speed nano-magnetic switches. Such current-based-switches can be attractive for designing low swing global-interconnects, like, clocking-networks and databuses. In this…
Voltage-gate assisted spin-orbit torque (VGSOT) writing scheme combines the advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit torque (SOT) effects, enabling multiple benefits for magnetic random access memory…
This paper analyzes write errors in spin torque switching due to thermal fluctuations in a system with Perpendicular Magnetic Anisotropy (PMA). Prior analytical and numerical methods are summarized, a physics based Fokker-Planck Equation…
In this paper, we report a generation of a spin-wave excitation (SWE) with a near-unity () probability in a given time (~730). Such deterministic generation relies on a feedback scheme with a millisecond quantum memory. The millisecond…
This work represents integration of MTJ with 30nm FinFET for low voltage analog write operations and readout optimization for the p-bit or true random number generator (TRNG), where the induced p-bit, the probabilistic state of the magnetic…
As dynamic random access memory (DRAM) and other current transistor-based memories approach their scalability limits, the search for alternative storage methods becomes increasingly urgent. Phase-change memory (PCM) emerges as a promising…
Sub/Near-threshold static random-access memory (SRAM) design is crucial for addressing the memory bottleneck in energy-constrained applications. However, the high integration density and reliability under process variations demand an…
One of the most exciting applications of Spin Torque Magnetoresistive Random Access Memory (ST-MRAM) is the in-memory implementation of deep neural networks, which could allow improving the energy efficiency of Artificial Intelligence by…
Automatic Speech Recognition (ASR) systems are evaluated using Word Error Rate (WER), which is calculated by comparing the number of errors between the ground truth and the transcription of the ASR system. This calculation, however,…
In this paper, we report the effect of write voltage and frequency on memristor based Resistive Random Access Memory (RRAM). The above said parameters have been investigated on the linear drift model of memristor. With a variation of write…
Magnetic random-access memory (MRAM) is a promising memory technology due to its high density, non-volatility, and high endurance. However, achieving high memory fidelity incurs significant write-energy costs, which should be reduced for…
State-level minimum Bayes risk (sMBR) training has become the de facto standard for sequence-level training of speech recognition acoustic models. It has an elegant formulation using the expectation semiring, and gives large improvements in…
The Word Error Rate (WER) is the common measure of accuracy for Automatic Speech Recognition (ASR). Transcripts are usually pre-processed by substituting specific characters to account for non-semantic differences. As a result of this…