Related papers: Write error rate of spin-transfer-torque random ac…

Spin-orbit-torque magnetic random access memory (SOT-MRAM) is a promising technology for the next generation of data storage devices. The main bottleneck of this technology is the high reversal current density threshold. This outstanding…

As capacity and complexity of on-chip cache memory hierarchy increases, the service cost to the critical loads from Last Level Cache (LLC), which are frequently repeated, has become a major concern. The processor may stall for a…

We investigated the performance of spin transfer torque random access memory (STT-RAM) cell with cross shaped Heusler compound based free layer using micromagnetic simulations. We designed the free layer using Cobalt based Heusler…

Working memory (WM) has been intensively used to enable the temporary storing of information for processing purposes, playing an important role in the execution of various cognitive tasks. Recent studies have shown that information in WM is…

The Recurrent Neural Network-Transducer (RNN-T) is widely adopted in end-to-end (E2E) automatic speech recognition (ASR) tasks but depends heavily on large-scale, high-quality annotated data, which are often costly and difficult to obtain.…

Voltage-controlled magnetoresistive random access memory (VC-MRAM) based on voltage-induced dynamic switching in magnetic tunnel junctions (MTJs) is a promising ultimate non-volatile memory with ultralow power consumption. However, the…

Recently, spin-transfer torque (STT) based magnetization switching has been widely utilized in magnetic resistance-based memories, which have broad applications in microcontroller units and other devices. This study utilizes a macrospin…

Spin-Transfer Torque RAM (STTRAM) is promising for cache applications. However, it brings new data security issues that were absent in volatile memory counterparts such as Static RAM (SRAM) and embedded Dynamic RAM (eDRAM). This is…

Stepped-wedge cluster randomized trials (SW-CRTs) evaluate interventions rolled out across clusters over time. Standard analyses typically use immediate-treatment (IT) models, which assume effects begin at crossover and remain constant…

Spin-Orbit Torque (SOT) Magnetic Random-Access Memory (MRAM) devices offer improved power efficiency, nonvolatility, and performance compared to static RAM, making them ideal, for instance, for cache memory applications. Efficient…

The attention mechanism in text generation is memory-bounded due to its sequential characteristics. Therefore, off-chip memory accesses should be minimized for faster execution. Although previous methods addressed this by pruning…

Current-induced spin-transfer torques (STT) and spin-orbit torques (SOT) enable the electrical switching of magnetic tunnel junctions (MTJs) in nonvolatile magnetic random access memories. In order to develop faster memory devices, an…

Motivated by single-particle cryo-electron microscopy, multi-reference alignment (MRA) models the task of recovering an unknown signal from multiple noisy observations corrupted by random rotations. The standard approach,…

Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory…

Non-volatile memory, such as resistive RAM (RRAM), is an emerging energy-efficient storage, especially for low-power machine learning models on the edge. It is reported, however, that the bit error rate of RRAMs can be up to 3.3% in the…

Using type-x spin-orbit torque (SOT) switching scheme, in which the easy axis (EA) of the ferromagnetic (FM) layer and the charge current flow direction are collinear, is possible to realize a lower-power-consumption, higher-density, and…

The "Switchboard benchmark" is a very well-known test set in automatic speech recognition (ASR) research, establishing record-setting performance for systems that claim human-level transcription accuracy. This work highlights lesser-known…

During the last decade, valence change memory (VCM) has been extensively studied due to its promising features, such as a high endurance and fast switching times. The information is stored in a high resistive state (logcial '0', HRS) and a…

To optimize the design of STT-MRAM (spin-transfer torque magnetic random access memory), it is necessary to be able to predict switching (error) rates. For small elements, this can be done using a single-macrospin theory since the element…

Thanks to its superior features of fast read/write speed and low power consumption, spin-torque transfer magnetic random access memory (STT-MRAM) has become a promising non-volatile memory (NVM) technology that is suitable for many…