Related papers: Principles of an atomtronic transistor
We study the thermopower of a quantum dot weakly coupled to two reservoirs by tunnel junctions. At low temperatures the transport through the dot is suppressed by charging effects (Coulomb blockade). As a result the thermopower shows an…
We investigate by low-temperature transport experiments the sub-threshold behavior of triple-gate silicon field-effect transistors. These three-dimensional nano-scale devices consist of a lithographically defined silicon nanowire surrounded…
GaSb p-channel MOSFETs with an atomic layer deposited Al2O3 gate dielectric and a self-aligned Si implanted source/drain are demonstrated. Thermal anneal conditions are optimized for the source/drain impurity activation. Temperature…
We report the direct observation of resistive flow through a weak link in a weakly interacting atomic Bose-Einstein condensate. Two weak links separate our ring-shaped superfluid atomtronic circuit into two distinct regions, a source and a…
A universal mechanism of superconductivity applicable to ``low temperature'' and ``high temperature'' superconductors is proposed in this paper. With this model of mechanism experimental facts of superconductors can be qualitatively…
Transport of a Brownian particle moving in a periodic potential is investigated in the presence of symmetric unbiased external force. The viscous medium is alternately in contact with the two heat reservoirs. We present the analytical…
In the pursuit of room temperature quantum hardware, our study introduces a gate voltage tunable quantum wire within a tri-gated n-type junctionless MOSFET. The application of gate voltage alters the parabolic potential well of the…
The local nonequilibrium quasiparticle distribution function in a normal-metal wire depends on the applied voltage over the wire and the type and strength of different scattering mechanisms. We show that in a setup with superconducting…
It is shown that the noise-limited charge sensitivity of a single-electron transistor using superconductors (of either $SISIS$ or $NISIN$ type) operating near the threshold of quasiparticle tunneling, can be considerably higher than that of…
Quantum transitions are described semiclassically as motions of systems along (complex) trajectories. We consider the cases when the semiclassical trajectories are unstable and find that durations of the corresponding transitions are large.…
An important consideration in miniaturizing transistors is maximizing the coupling between the gate and the semiconductor channel. A nanowire with a coaxial metal gate provides optimal gate-channel coupling, but has only been realized for…
We study switching between period-two states of an underdamped quantum oscillator modulated at nearly twice its natural frequency. For all temperatures and parameter values switching occurs via quantum activation: it is determined by…
We report on the observation of an interaction blockade effect for ultracold atoms in optical lattices, analogous to Coulomb blockade observed in mesoscopic solid state systems. When the lattice sites are converted into biased double wells,…
Semiconductor quantum dots provide a two-dimensional analogy for real atoms and show promise for the implementation of scalable quantum computers. Here, we investigate the charge configurations in a silicon metal-oxide-semiconductor double…
We present a detailed, realistic analysis of the implementation of a proposal for a quantum phase gate based on atomic vibrational states, specializing it to neutral rubidium atoms on atom chips. We show how to create a double--well…
A theory of transverse electron transport coupled with heat transfer in semiconductor thin films is developed conceptually modeling structures of modern electronics. The transverse currents generate Joule heat with positive feedback through…
When a Brownian particle, initially being in the potential well, overcomes the barrier and moves to the absorptive border, it still has a chance to be scattered back to the well by thermal fluctuations. We study this phenomenon carefully…
Identifying materials and devices which offer efficient thermoelectric effects at low temperature is a major obstacle for the development of thermal management strategies for low-temperature electronic systems. Superconductors cannot offer…
The gate bias dependency of conductivity is examined in two Si quantum wells with well thickness tw = 7 nm and tw = 14 nm. The conductivity of the thinner device behaves smoothly whereas the thicker device shows strong non-monotonic…
In a family of experiments carried on all-metallic supercurrent nano-transistors a surprising gating effect has been recently shown. These include the full suppression of the critical supercurrent, the increase of quasiparticle population,…