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Related papers: Principles of an atomtronic transistor

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The transport of atoms is experimentally studied in a transistor-like triple-well potential consisting of a narrow gate well surrounded by source and drain wells. Atoms are initially loaded into the source well with pre-determined…

Atomic Physics · Physics 2016-02-17 Seth C. Caliga , Cameron J. E. Straatsma , Dana Z. Anderson

An atomtronic transistor circuit is used to realize a driven matterwave oscillator. The transistor consists of Source and Drain regions separated by a narrow Gate well. Quasi-steady-state behavior is determined from a thermodynamic model,…

Atomic Physics · Physics 2013-09-16 Seth C. Caliga , Cameron J. E. Straatsma , Alex A. Zozulya , Dana Z. Anderson

The atomtronic matter-wave triple-well transistor is theoretically predicted to exhibit current gain and act as a coherent matter-wave emitter. In this work, we investigate the dynamics of an atomtronic transistor composed of a triple-well…

We present a mechanism for quantum gates where the qubits are encoded in the population distribution of two component ultracold atoms trapped in a species-selective triple-well potential. The gate operation is a specific application of a…

Quantum Gases · Physics 2014-06-06 Miroslav Gajdacz , Tomáš Opatrný , Kunal K. Das

A self-consistent theoretical treatment of a triple-well atomtronic transistor circuit reveals the mechanism of gain, conditions of oscillation, and properties of the subsequent coherent matterwaves emitted by the circuit. A Bose-condensed…

Quantum Physics · Physics 2021-09-15 Dana Z. Anderson

We theoretically investigate the transport properties of cold bosonic atoms in a quasi one-dimensional triple-well potential that consists of two large outer wells, which act as microscopic source and drain reservoirs, and a small inner…

Quantum Gases · Physics 2015-05-14 P. Schlagheck , F. Malet , J. C. Cremon , S. M. Reimann

Atomtronics focuses on atom analogs of electronic materials, devices and circuits. A strongly interacting ultracold Bose gas in a lattice potential is analogous to electrons in solid-state crystalline media. As a consequence of the band…

Statistical Mechanics · Physics 2015-06-25 B. T. Seaman , M. Kraemer , D. Z. Anderson , M. J. Holland

In this work, we investigate the conduction properties of strongly interacting fermions flowing through a quasi two-dimensional, multimode channel, which connects two atomic reservoirs. The atomic current in the channel is controlled using…

The controlled fabrication of actively switchable atomic-scale devices, in particular transistors, has remained elusive to date. Here we explain operation of an atomic-scale three-terminal device by a novel switching mechanism of bistable,…

Mesoscale and Nanoscale Physics · Physics 2009-04-07 F. -Q. Xie , R. Maul , A. Augenstein , Ch. Obermair , E. B. Starikov , G. Schoen , Th. Schimmel , W. Wenzel

Fluctuations are strong in mesoscopic systems and have to be taken into account for the description of transport. We show that they can even be used as a resource for the operation of a system as a device. We use the physics of…

Mesoscale and Nanoscale Physics · Physics 2017-06-07 Rafael Sánchez , Holger Thierschmann , Laurens W. Molenkamp

It is known that a semi-classical analysis is not always adequate for atomtronics devices, but that a fully quantum analysis is often necessary to make reliable predictions. While small numbers of atoms at a small number of sites are…

Quantum Physics · Physics 2015-06-11 M. K. Olsen , A. S. Bradley

Logical devices based on electrical currents are ubiquitous in modern society. However, digital logic does have some drawbacks such as a relatively high power consumption. It is therefore of great interest to seek alternative means to build…

Quantum Physics · Physics 2020-05-18 Marco Majland , Kasper Sangild Christensen , Nikolaj Thomas Zinner

A tunneling transistor without heterojunction as a theoretical design, or more precisely controlled electron current transmission by barrier potential, is under consideration. The electrons from the conduction band of the source tunnel…

Applied Physics · Physics 2023-04-27 Pawel Pfeffer

Transistors, regardless of their size, rely on electrical gates to control the conductance between source and drain contacts. In atomic-scale transistors, this conductance is exquisitely sensitive to single electrons hopping via individual…

Thermal escape out of a metastable well is considered in the weak friction regime, where the bottleneck for decay is energy diffusion, and at lower temperatures, where quantum tunneling becomes relevant. Within a systematic semiclassical…

Statistical Mechanics · Physics 2015-05-13 Alvise Verso , Joachim Ankerhold

We present experiments on a superconductor-normal metal electron refrigerator in a regime where single-electron charging effects are significant. The system functions as a heat transistor, i.e., the heat flux out from the normal metal…

Mesoscale and Nanoscale Physics · Physics 2009-11-13 Olli-Pentti Saira , Matthias Meschke , Francesco Giazotto , Alexander M. Savin , Mikko Mottonen , Jukka P. Pekola

This paper addresses the question of whether a ``rigid molecule'' (one which does not deform in an external field) used as the conducting channel in a standard three-terminal MOSFET configuration can offer any performance advantage relative…

Mesoscale and Nanoscale Physics · Physics 2009-11-07 Prashant Damle , Titash Rakshit , Magnus Paulsson , Supriyo Datta

A quantum thermal transistor is designed by the strong coupling between one qubit and one qutrit which are in contact with three heat baths with different temperatures. The thermal behavior is analyzed based on the master equation by both…

Quantum Physics · Physics 2019-03-12 Bao-qing Guo , Tong Liu , Chang-shui Yu

The superconductor-insulator transition in two dimensions has been widely investigated as a paradigmatic quantum phase transition. The topic remains controversial, however, because many experiments exhibit a metallic regime with saturating…

Mesoscale and Nanoscale Physics · Physics 2019-06-07 C. G. L. Bøttcher , F. Nichele , M. Kjaergaard , H. J. Suominen , J. Shabani , C. J. Palmstrøm , C. M. Marcus

Nonequilibrium processes in semiconductors are considered with highly nonuniform initial densities of charge carriers. It is shown that there exist such distributions of charge densities under which the electric current through a sample…

Condensed Matter · Physics 2009-10-31 V. I. Yukalov , E. P. Yukalova , M. R. Singh
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