Related papers: Principles of an atomtronic transistor
We measure hole transport in poly(3-hexylthiophene) field effect transistors with channel lengths from 3 $\mu$m down to 200 nm, from room temperature down to 10 K. Near room temperature effective mobilities inferred from linear regime…
We study the tunneling of a two-level atom in a double well potential while the atom is coupled to a single electromagnetic field mode of a cavity. The coupling between internal and external degrees of freedom, due to the mechanical effect…
We investigate analytically the motion of underdamped particles subject to a deterministic periodic potential and a periodic temperature. Despite the fact that an underamped particle experiences the temperature oscillation many times in its…
A quantum-dot thermal transistor consisting of three Coulomb-coupled quantum dots coupled to respective electronic reservoirs by tunnel contacts is established. The heat flows through the collector and emitter can be controlled by the…
We report on the first model of a thermal transistor to control heat flow. Like its electronic counterpart, our thermal transistor is a three-terminal device with the important feature that the current through the two terminals can be…
The contact issue for two-dimensional (2D) materials-based field-effect transistors (FETs) has drawn enormous attention in recent years. Although ohmic behavior is achieved at room temperature, the drain current of 2DFETs shifts from ohmic…
We derive a quantum master equation to treat quantum systems interacting with multiple reservoirs. The formalism is used to investigate atomic transport across a variety of lattice configurations. We demonstrate how the behavior of an…
Transport of a Brownian particle moving along the axis of a three-dimensional asymmetric periodic tube is investigated in the presence of asymmetric unbiased forces. The reduction of the coordinates may involve not only the appearance of…
The semi-classical study of the integer Quantum Hall conductivity is investigated for electrons in a bi-periodic potential $V(x,y)$. The Hall conductivity is due to the tunnelling effect and we concentrate our study to potentials having…
The quantum conductance of the single-electron tunneling (SET) transistor is investigated in this paper by the functional integral approach. The formalism is valid for arbitrary tunnel resistance of the junctions forming the SET transistor…
We propose a new two--qubit phase gate for ultra--cold atoms confined in an experimentally realized tilted double--well optical lattice [Sebby--Strabley et al., Phys. Rev. A {\bf 73} 033605 (2006)]. Such a lattice is capable of confining…
The effective spin Hamiltonian of a triple quantum dot with odd electron occupation weakly connected in series with left ($l$) and right ($r$) metal leads is composed of two-channel exchange and co-tunneling terms. Renormalization group…
We study thermoelectric currents of neutral, fermionic atoms flowing through a mesoscopic channel connecting a hot and a cold reservoir across the superfluid transition. The thermoelectric response results from a competition between…
We illustrate that open quantum systems composed of neutral, ultracold atoms in one-dimensional optical lattices can exhibit behavior analogous to semiconductor electronic circuits. A correspondence is demonstrated for bosonic atoms, and…
We investigate arrays of three traps with two fermionic or bosonic atoms. The tunneling interaction between neighboring sites is used to prepare multi-site dark states for the empty site, i.e., the hole, allowing for the coherent…
Using a one-dimensional tight-binding Anderson model, we study a disordered nanowire in the presence of an external gate which can be used for depleting its carrier density (field effect transistor device configuration). In this first…
This work presents an original concept directed to implement an unconventional methodology where a device is produced by integrating a solid-state circuitry concept and an electrochemistry cell. In our experimental system an organic…
Split-gate constrictions can be used to produce controllable scattering in a fractional quantum Hall state and constitute a very versatile model system for the investigation of non-Fermi physics in edge states. Controllable inter-edge…
A simulation methodology for ultra-scaled InAs quantum well field effect transistors (QWFETs) is presented and used to provide design guidelines and a path to improve device performance. A multiscale modeling approach is adopted, where…
A unified theoretical description of ballistic and diffusive carrier transport in parallel-plane semiconductor structures is developed within the semiclassical model. The approach is based on the introduction of a thermo-ballistic current…