Related papers: 100ps time resolution with thin silicon pixel dete…
A monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch of approximately 100 $\mu$m. Three analog pixels were…
The time resolution of the second monolithic silicon pixel prototype produced for the MONOLITH H2020 ERC Advanced project was studied using a femtosecond laser. The ASIC contains a matrix of hexagonal pixels with 100 {\mu}m pitch, readout…
SiGe BiCMOS technology can be used to produce ultra-fast, low-power silicon pixel sensors that provide state-of-the-art time resolution even without an internal gain mechanism. The development of such sensors requires the identification of…
A monolithic pixelated silicon detector designed for high time resolution has been produced in the SG13G2 130 nm SiGe BiCMOS technology of IHP Mikroelektronik. This proof-of-concept chip contains hexagonal pixels of 65 {\mu}m and 130 {\mu}m…
A second monolithic silicon pixel prototype was produced for the MONOLITH project. The ASIC contains a matrix of hexagonal pixels with 100 {\mu}m pitch, readout by a low-noise and very fast SiGe HBT frontend electronics. Wafers with 50…
In this paper the results of a beam test characterization campaign of 3D trench silicon pixel sensors are presented. A time resolution in the order of 10 ps was measured both for non-irradiated and irradiated sensors up to a fluence of $2.5…
A new particle detector with sub-nanosecond time resolution capable of working in high-rate environment (rate capability of the order of $MHz/ cm^2$) is under developmnet. Semiconductive electrodes with resistivity $\rho$ up to $10^8…
A monolithic silicon pixel ASIC prototype, produced in 2024 as part of the Horizon 2020 MONOLITH ERC Advanced project, was tested with a 120 GeV/c pion beam. The ASIC features a matrix of hexagonal pixels with a 100 \mu m pitch, read by…
We address the determination of the time resolution for the $\rm 100~\mu m$ 4H-SiC PIN detectors fabricated by Nanjing University (NJU). The time response to $\rm \beta$ particles from a $\rm ^{90}$Sr source is investigated for the…
3D silicon pixel detectors have been investigated as radiation-hard candidates for the innermost layers of the HL-LHC upgrade of the ATLAS pixel detector. 3D detectors are already in use today in the ATLAS IBL and AFP experiments. These are…
In the last years, high-resolution time tagging has emerged as the tool to tackle the problem of high-track density in the detectors of the next generation of experiments at particle colliders. Time resolutions below 50ps and event average…
Silicon carbide detectors exhibit good detection performance such as fast time resolution, high radiation tolerances, high breakdown voltage and low temperature sensitivity and have been studied for detection applications. Meanwhile,…
The TT-PET collaboration is developing a PET scanner for small animals with 30 ps time-of-flight resolution and sub-millimetre 3D detection granularity. The sensitive element of the scanner is a monolithic silicon pixel detector based on…
We evaluate the performances of a 100 um-thick silicon strip detector (SSD) with a 300 MeV proton beam and a 90Sr beta-ray source. Signals from the SSD have been read out using a VLSI chip. Common-mode noise, signal separation efficiency…
Small-pitch 3D silicon pixel detectors have been investigated as radiation-hard candidates for the innermost layers of the HL-LHC pixel detector upgrades. Prototype 3D sensors with pixel sizes of 50$\times$50 and 25$\times$100 $\mu$m$^{2}$…
This paper describes the performance of a prototype timing detector, based on 50 micrometer thick Ultra Fast Silicon Detector, as measured in a beam test using a 180 GeV/c momentum pion beam. The dependence of the time precision on the…
In June 2008 single-sided silicon strip sensors with 50 $\mu$m readout pitch were tested in a highly energetic pion beam at the SPS at CERN. The purpose of the test was to evaluate characteristic detector properties by varying the strip…
3D silicon detectors are characterized by cylindrical electrodes perpendicular to the surface and penetrating into the bulk material in contrast to standard Si detectors with planar electrodes on its top and bottom. This geometry renders…
Swift, high resolution CMOS pixel sensors are being developed for the ILC vertex detector, aiming to allow approaching the interaction point very closely. A major issue is the time resolution of the sensors needed to deal with the high…
A monolithic silicon pixel prototype produced for the MONOLITH ERC Advanced project was irradiated with 70 MeV protons up to a fluence of 1 x 10^16 1 MeV n_eq/cm^2. The ASIC contains a matrix of hexagonal pixels with 100 {\mu}m pitch,…