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A new generation of 3D silicon pixel detectors with a small pixel size of 50$\times$50 and 25$\times$100 $\mu$m$^{2}$ is being developed for the HL-LHC tracker upgrades. The radiation hardness of such detectors was studied in beam tests…

Instrumentation and Detectors · Physics 2017-07-05 J. Lange , S. Grinstein , M. Manna , G. Pellegrini , D. Quirion , S. Terzo , D. Vázquez Furelos

A graphene-optimized silicon carbide PIN detector was fabricated and its radiation tolerance under X-ray irradiation of 160 keV was evaluated. Its electrical properties, charge collection performance and time resolution of beta-particles…

Instrumentation and Detectors · Physics 2026-04-23 Zhenyu Jiang , Congcong Wang , Jingxuan He , Yi Zhan , Yingjie Huang , Xiyuan Zhang , Xin Shi

Synchrotron radiation light sources produce intense beam of X-ray with ultra-short pulse and nanosecond period. This of-fers the opportunities for the time resolution experiments. Achieving higher counting rate and faster arriving time is…

Instrumentation and Detectors · Physics 2015-11-05 Zhen-jie Li , Qiu-ju Li , Peng Liu , Shan-feng Wang , Wei-wei Dong , Yang-fan Zhou

The design of a detector system comprised of four silicon sensors bump-bonded to Timepix4 ASICs is described together with its data acquisition system, operational infrastructure, and dedicated software. The spatial and temporal performance…

The proof-of-concept prototype of the Picosecond Avalanche Detector, a multi-PN junction monolithic silicon detector with continuous gain layer deep in the sensor depleted region, was tested with a beam of 180 GeV pions at the CERN SPS. The…

High-time-resolution counters based on plastic scintillator with silicon photomultiplier (SiPM) readout have been developed for applications to high energy physics experiments for which relatively large-sized counters are required. We have…

Instrumentation and Detectors · Physics 2014-10-17 Paolo W. Cattaneo , Matteo De Gerone , Flavio Gatti , Miki Nishimura , Wataru Ootani , Massimo Rossella , Yusuke Uchiyama

The SAMpler for PICosecond time (SAMPIC) chip has been designed by a collaboration including CEA/IRFU/SEDI, Saclay and CNRS/LAL/SERDI, Orsay. It benefits from both the quick response of a time to digital converter and the versatility of a…

Samples of the monolithic silicon pixel ASIC prototype produced in 2022 within the framework of the Horizon 2020 MONOLITH ERC Advanced project were irradiated with 70 MeV protons up to a fluence of 1 x 1016 neq/cm2, and then tested using a…

This paper presents results that take a critical step toward proving 10 ps timing resolution's feasibility for particle identification in the TOPSiDE detector concept for the Electron-Ion Collider. Measurements of LGADs with a thickness of…

Instrumentation and Detectors · Physics 2021-07-07 M. Jadhav , W. Armstrong , I. Cloet , S. Joosten , S. M. Mazza , J. Metcalfe , Z. -E. Meziani , H. F. -W. Sadrozinski , B. Schumm , A. Seiden

The extremely low dark current of silicon carbide (SiC) detectors, even after high-fluence irradiation, was utilized to develop a beam monitoring system for a wide range of particle rates, i.e., from the kHz to the GHz regime. The system is…

Instrumentation and Detectors · Physics 2024-03-20 Simon Waid , Andreas Gsponer , Jürgen Maier , Philipp Gaggl , Richard Thalmeier , Thomas Bergauer

A silicon 3D detector with a single cell of 50x50 um2 was produced and evaluated for timing applications. The measurements of time resolution were performed for 90Sr electrons with dedicated electronics used also for determining time…

Instrumentation and Detectors · Physics 2019-06-26 G. Kramberger , V. Cindro , D. Flores , S. Hidalgo , B. Hiti , M. Manna , I. Mandić , M. Mikuž , D. Quirion , G. Pellegrini , M. Zavrtanik

A pixel detector with high spatial resolution and temporal information for ultra-cold neutrons is developed based on a commercial CCD on which a neutron converter is attached. 10B and 6Li are tested for the neutron converter and 10B is…

Instrumentation and Detectors · Physics 2010-02-03 S. Kawasaki , G. Ichikawa , M. Hino , Y. Kamiya , M. Kitaguchi , S. Komamiya , T. Sanuki , S. Sonoda

We present a detailed study of an 8-channel $1\times1$ mm$^{2}$ WSi superconducting microwire single photon detector (SMSPD) array exposed to 120 GeV hadron beam and 120 GeV muon beam at the CERN Super Proton Synchrotron H6 beamline.…

The proven radiation hardness of silicon 3D devices up to fluences of $1 {\times} 10^{17}$ $n_{eq}/cm^{2}$ makes them an excellent choice for next generation trackers, providing < 10 ${\mu}m$ position resolution at a high multiplicity…

Instrumentation and Detectors · Physics 2024-03-05 Evangelos-Leonidas Gkougkousis , Edgar Lemos Cid , Viktor Coco

A silicon pixel detector with fine pitch size of 19x19 um, developed base on SOI (silicon on insulator) technology, was tested under the illumination of infrared laser pulses. As an alternative way to particle beam tests, the laser pulses…

Instrumentation and Detectors · Physics 2016-08-03 Yi Liu , Yunpeng Lu , Xudong Ju , Qun Ouyang

A photon-number-resolving detector based on a four-element superconducting nanowire single photon detector is demonstrated to have sub-30-ps resolution in measuring the arrival time of individual photons. This detector can be used to…

Ultra-Fast Silicon Detectors (UFSDs) are n-in-p silicon detectors that implement moderate gain (typically 5 to 25) using a thin highly doped p++ layer between the high resistivity p-bulk and the junction of the sensor. The presence of gain…

The development of Low-Gain Avalanche Detectors has opened up the possibility of manufacturing silicon detectors with signal larger than that of traditional sensors. In this paper we explore the timing performance of Low-Gain Avalanche…

The existing ATLAS Tracker will be at its functional limit for particle fluences of 10^15 neq/cm^2 (LHC). Thus for the upgrades at smaller radii like in the case of the planned Insertable B-Layer (IBL) and for increased LHC luminosities…

The MiniCactus sensors are demonstrator sensors designed in LFoundry LF15A 150 nm technology, intended to study the performance of non amplified High Voltage High Resistivity CMOS sensors for measurement of time of arrival of charged…