Related papers: A novel structure designed for high density nonvol…
The memory window of floating gate (FG) type non-volatile memory (NVM) devices is a fundamental figure of merit used not only to evaluate the performance, such as retention and endurance, but also to discuss the feasibility of advanced…
The demands of modern electronic components require advanced computing platforms for efficient information processing to realize in-memory operations with a high density of data storage capabilities towards developing alternatives to von…
Emerging memristor-based array architectures have been effectively employed in non-volatile memories and neuromorphic computing systems due to their density, scalability and capability of storing information. Nonetheless, to demonstrate a…
Neurons with internal memory have been proposed for biological and bio-inspired neural networks, adding interesting functionality. We propose and model a nanoscale optoelectronic neural node with charge-based time-limited memory and signal…
Integrated optoelectronic systems strive to combine the logic/memory density of electronics with the bandwidth of photonics, but monolithic realization is impeded by the inefficient electronic-to-photonic interface. Current architectures…
A new type of a capacitor with a very high volumetric capacitance is proposed. It is based upon the known phenomenon of a sharp increase of the dielectric constant of the metal-insulator composite in the vicinity of the percolation…
As high-performance computing (HPC) moves into the exascale era, computer scientists and engineers must find innovative ways of transferring and processing unprecedented amounts of data. As the scale and complexity of the applications…
Memristors, when utilized as electronic components in circuits, can offer opportunities for the implementation of novel reconfigurable electronics. While they have been used in large arrays, studies in ensembles of devices are comparatively…
This paper summarizes the idea of Tiered-Latency DRAM (TL-DRAM), which was published in HPCA 2013, and examines the work's significance and future potential. The capacity and cost-per-bit of DRAM have historically scaled to satisfy the…
Floating gate transistor is the basic building block of non-volatile flash memory, which is one of the most widely used memory gadgets in modern micro and nano electronic applications. Recently there has been a surge of interest to…
The increasing capacity of modern computers, driven by Moore's Law, is accompanied by smaller noise margins and higher error rates. In this paper we propose a memory device, consisting of a ring of two identical overdamped bistable…
With the increasing demand for low-power electronics, nanomagnetic devices have emerged as strong potential candidates to complement present day transistor technology. A variety of novel switching effects such as spin torque and giant spin…
Optical devices with metastable states controlled with light (optical flip-flops) are needed in data storage, signal processing and displays. Although non-volatile optical memory relying on structural phase transitions in chalcogenide…
Non-volatile memory (NVM) is an emerging technology, which has the persistence characteristics of large capacity storage devices(e.g., HDDs and SSDs), while providing the low access latency and byte-addressablity of traditional DRAM memory.…
The recent geopolitical crisis resulted in a gas price surge. Although lithium-ion batteries represent the best available rechargeable battery technology, a significant energy and power density gap exists between LIBs and petrol/gasoline.…
The main problem about replacing LTP as a memory mechanism has been to find other highly abstract, easily understandable principles for induced plasticity. In this paper we attempt to lay out such a basic mechanism, namely intrinsic…
Few-layer ReS2 field-effect transistors (FET) with a local floating gate (FG) of monolayer graphene separated by a thin h-BN tunnel layer for application to a non-volatile memory (NVM) device is designed and investigated. FG-NVM devices…
Piezoelectric FET (PeFET) is a promising non-volatile-memory (NVM) device that integrates a piezoelectric (PE)/ferroelectric (FE) capacitor with a 2D transistor. It uses the polarization of the FE capacitor for bit-storage and…
Resistive memories store information in a crossbar arrangement of two-terminal devices that can be programmed to patterns of high or low resistance. While extremely compact, this technology suffers from the "sneak-path" problem: certain…
A tungsten filament immersed in superfluid helium has strong hysteretic $I$-$V$ characteristics. By increasing the applied voltage, a remarkable current drop occurs at a transition voltage, at which the filament enters a non-ohmic hot state…