Related papers: A novel structure designed for high density nonvol…
Carbon nanotube field-effect transistors (CNT FETs) have been proposed as possible building blocks for future nano-electronics. But a challenge with CNT FETs is that they appear to randomly display varying amounts of hysteresis in their…
Ferroelectrics offer a promising materials platform to realize energy-efficient non-volatile memory technology with the FeFET-based implementations being one of the most area-efficient ferroelectric memory architectures. However, the FeFET…
The rapid development of multi-core system and increase of data-intensive application in recent years call for larger main memory. Traditional DRAM memory can increase its capacity by reducing the feature size of storage cell. Now further…
We propose a quantum repeater architecture that can operate without cryogenics. Each node in our architecture builds on a cell of hot alkali atoms and noble-gas spins which offer a storage time as long as a few hours. Such a cell of hybrid…
Quantum memory is a central component for quantum information processing devices, and will be required to provide high-fidelity storage of arbitrary states, long storage times and small access latencies. Despite growing interest in applying…
Resilience is a major design goal for HPC. Checkpoint is the most common method to enable resilient HPC. Checkpoint periodically saves critical data objects to non-volatile storage to enable data persistence. However, using checkpoint, we…
Like silicon-based semiconductor devices, van der Waals heterostructures will require integration with high-K oxides. This is needed to achieve suitable voltage scaling, improved performance as well as allowing for added functionalities.…
Non-volatile memory arrays can deploy pre-trained neural network models for edge inference. However, these systems are affected by device-level noise and retention issues. Here, we examine damage caused by these effects, introduce a…
Non-volatile memory (NVM) is a class of promising scalable memory technologies that can potentially offer higher capacity than DRAM at the same cost point. Unfortunately, the access latency and energy of NVM is often higher than those of…
The magnetoelectric effects in multiferroics have a great potential in creating next-generation memory devices. We conceive a new concept of non-volatile memories based on a type of nonlinear magnetoelectric effects showing a…
Previous mechanical meta-structures used for mechanical memory storage, computing and information processing are severely constrained by low information density and/or non-robust structural stiffness to stably protect the maintained…
The modern semiconductor industry requires memory solutions that can keep pace with the high-speed demands of high-performance computing. Embedded non-volatile memories (eNVMs) address these requirements by offering faster access to stored…
Portable miniaturized energy storage micro-supercapacitor has engrossed significant attention due to its power source and energy storage capacity, replacing batteries in ultra-small electronic devices. Fabrication with porous and 2D…
This paper gives an overview of recent progress in the brain inspired computing field with a focus on implementation using emerging memories as electronic synapses. Design considerations and challenges such as requirements and design…
A long-standing goal of computer technology is to process and store digital information with the same device in order to implement new architectures. One way to accomplish this is to use nanomagnetic `non-volatile' logic gates that can…
Key-value store is a popular type of cloud computing applications. The performance of key-value store applications have been shown to be very sensitive to load within the data center, and in particular to latency. As load within data center…
Understanding the physical and chemical mechanisms occurring during the forming process and operation of an organic resistive memory device is a major issue for better performances. Various mechanisms were suggested in vertically stacked…
In this letter, we demonstrate a non-volatile memory device in a graphene FET structure using ferroelectric gating. The binary information, i.e. "1" and "0", is represented by the high and low resistance states of the graphene working…
The discovery and precise manipulation of atomic-size conductive ferroelectric domain defects, such as geometrically confined walls, offer new opportunities for a wide range of prospective electronic devices, and the so-called walltronics…
Heavy computational demands from artificial intelligence (AI) leads the research community to explore the design space for functional materials that can be used for high performance memory and neuromorphic computing hardware. Novel device…