Related papers: A novel structure designed for high density nonvol…
Non-volatile Memory (NVM) technologies present a promising alternative to traditional volatile memories such as SRAM and DRAM. Due to the limited availability of real NVM devices, simulators play a crucial role in architectural exploration…
In this article, we introduce a new nanoscale electromechanical device -- a leaky memcapacitor -- and show that it may be useful for the hardware implementation of spiking neurons. The leaky memcapacitor is a movable-plate capacitor that…
Several nanoelectronic devices have been already proved. However, no architecture which makes use of them provides a feasible opportunity to build medium/large systems. Nanoarchitecture proposals only solve a small part of the problems…
Memory latency, bandwidth, capacity, and energy increasingly limit performance. In this paper, we reconsider proposed system architectures that consist of huge (many-terabyte to petabyte scale) memories shared among large numbers of CPUs.…
Typical large-scale recommender systems use deep learning models that are stored on a large amount of DRAM. These models often rely on embeddings, which consume most of the required memory. We present Bandana, a storage system that reduces…
Heterogeneous systems appear as a viable design alternative for the dark silicon era. In this paradigm, a processor chip includes several different technological alternatives for implementing a certain logical block (e.g., core, on-chip…
The operation of a novel nonvolatile memory device based on a conductive ferroelectric/non-ferroelectric thin film multilayer stack is simulated numerically. The simulation involves the self-consistent steady state solution of Poisson's…
Systems that require high-throughput and fault tolerance, such as key-value stores and databases, are looking to persistent memory to combine the performance of in-memory systems with the data-consistent fault-tolerance of nonvolatile…
Byte-addressable non-volatile memory (NVM) features high density, DRAM comparable performance, and persistence. These characteristics position NVM as a promising new tier in the memory hierarchy. Nevertheless, NVM has asymmetric read and…
Quantum memory systems are vital in quantum information processing for dependable storage and retrieval of quantum states. Inspired by classical reliability theories that synthesize reliable computing systems from unreliable components, we…
Recent advances in metamaterials and fabrication techniques have revived interest in mechanical computing. Contrary to techniques relying on static deformations of buckling beams or origami-based lattices, the integration of wave scattering…
In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG structure. It produces large current density (>100 {\mu}A/{\mu}m…
Memory cells are an important building block of digital electronics. We combine here the unique electronic properties of semiconducting monolayer MoS2 with the high conductivity of graphene to build a 2D heterostructure capable of…
In order for the widely discussed benefits of flow batteries for electrochemical energy storage to be applied at large scale, the cost of the electrochemical stack must come down substantially. One promising avenue for reducing stack cost…
Superconductor electronics (SCE) is a promising complementary and beyond CMOS technology. However, despite its practical benefits, the realization of SCE logic faces a significant challenge due to the absence of dense and scalable…
We present a nanomechanical device design to be used in a non-volatile mechanical memory point. The structure is composed of a suspended slender nanowire (width : 100nm, thickness 430nm length : 8 to 30$\mu$m) clamped at its both ends.…
Resistive memories are outstanding electron devices that have displayed a large potential in a plethora of applications such as nonvolatile data storage, neuromorphic computing, hardware cryptography, etc. Their fabrication control and…
The number and diversity of consumer devices are growing rapidly, alongside their target applications' memory consumption. Unfortunately, DRAM scalability is becoming a limiting factor to the available memory capacity in consumer devices.…
As beam power continues to increase in next-generation accelerator facilities, high-power target systems face crucial challenges. Components like beam windows and particle-production targets must endure significantly higher levels of…
Robust multi-level spin memory with the ability to write information electrically is a long-sought capability in spintronics, with great promise for applications. Here we achieve nonvolatile and highly energy-efficient magnetization…