Information Density in Multi-Layer Resistive Memories
Abstract
Resistive memories store information in a crossbar arrangement of two-terminal devices that can be programmed to patterns of high or low resistance. While extremely compact, this technology suffers from the "sneak-path" problem: certain information patterns cannot be recovered, as multiple low resistances in parallel make a high resistance indistinguishable from a low resistance. In this paper, a multi-layer device is considered, and the number of bits it can store is derived exactly and asymptotic bounds are developed. The information density of a series of isolated arrays with extreme aspect ratios is derived in the single- and multi-layer cases with and without peripheral selection circuitry. This density is shown to be non-zero in the limit, unlike that of the arrays with moderate aspect ratios previously considered. A simple encoding scheme that achieves capacity asymptotically is presented.
Keywords
Cite
@article{arxiv.2202.06367,
title = {Information Density in Multi-Layer Resistive Memories},
author = {Susanna E. Rumsey and Stark C. Draper and Frank R. Kschischang},
journal= {arXiv preprint arXiv:2202.06367},
year = {2022}
}