Crossbar resistive memory with 1 Selector 1 Resistor (1S1R) structure is attractive for low-cost and high-density nonvolatile memory applications. As technology scales down to the single-nm regime, the increasing resistivity of wordline/bitline becomes a limiting factor to device reliability. This paper presents write/read communication channels while considering the line resistance and device variabilities by statistically relating the degraded write/read margins and the channel parameters. Binary asymmetric channel (BAC) models are proposed for the write/read operations. Simulations based on these models suggest that the bit-error rate of devices are highly non-uniform across the memory array. These models provide quantitative tools for evaluating the trade-offs between memory reliability and design parameters, such as array size, technology nodes, and aspect ratio, and also for designing coding-theoretic solutions that would be most effective for crossbar memory.
@article{arxiv.1912.02963,
title = {Write and Read Channel Models for 1S1R Crossbar Resistive Memory with High Line Resistance},
author = {Zehui Chen and Lara Dolecek},
journal= {arXiv preprint arXiv:1912.02963},
year = {2020}
}