Related papers: TID-Effect Compensation and Sensor-Circuit Cross-T…
This paper presents the results of the characterisation of a thin, fully depleted pixel sensor manufactured in SOI technology on high-resistivity substrate with high momentum charged particles. The sensor is thinned to 70 $\mu$m and a thin…
The radiation response of a 0.25 um silicon-on-sapphire CMOS technology is characterized at the transistor and circuit levels utilizing both standard and enclosed layout devices. Device-level characterization showed threshold voltage change…
To strike a balance between energy efficiency and data quality control, this paper proposes a sensor censoring scheme for distributed sparse signal recovery via compressive-sensing based wireless sensor networks. In the proposed approach,…
In this paper, we demonstrate that the performance of silicon Schottky rectifiers on SOI can be significantly improved using a Lateral Dual Sidewall Schottky (LDSS) concept. Our results based on numerical simulation show that the LDSS…
The practical damage of silicon bipolar devices subjected to mixed ionization and displacement irradiations is usually evaluated by the sum of separated ionization and displacement damages. However, recent experiments show clear difference…
We have been developing the monolithic active pixel detector "XRPIX" onboard the future X-ray astronomical satellite "FORCE". XRPIX is composed of CMOS pixel circuits, SiO2 insulator, and Si sensor by utilizing the silicon-on-insulator…
Transition-edge sensor (TES) is a highly sensitive device that is capable of detecting extremely low levels of energy. It is characterised by low noise performance and high energy resolution. A mature method for reading out TES signal is…
It is shown that the electronic conduction in silicon-on-insulator (SOI) layers exhibits a metallic regime which is very similar to that in high-mobility Si-metal oxide semiconductor structures (MOS). The peak in the electron mobility…
Hardware impairments in physical transceivers are known to have a deleterious effect on communication systems; however, very few contributions have investigated their impact on relaying. This paper quantifies the impact of transceiver…
Aiming at providing wireless communication systems with environment-perceptive capacity, emerging integrated sensing and communication (ISAC) technologies face multiple difficulties, especially in balancing the performance trade-off between…
Two-dimensional Na$_3$Bi is a dual topological insulator protected by time-reversal and mirror symmetry, resulting in a promising platform for devices design. However, in reality, the design of topological devices is hindered by a…
Sensing-assisted communication schemes have recently garnered significant research attention. In this work, we design a dual-function reconfigurable intelligent surface (RIS), integrating both active and passive elements, referred to as the…
We have studied the physics of transition-edge sensor (TES) devices with an insulating AlOx layer on top of the device to allow implementation of more complex detector geometries. By comparing devices with and without the insulating film,…
Proximity effects at superconducting interfaces, between different superconductors (S-S') or between superconductors and normal metals (S-N), are fundamental to the performance of superconducting electronics, yet only few experiments have…
Tunneling between two parallel, two-dimensional electron gases (2DEGs) in a complex oxide heterostructure containing a large, mobile electron density of ~ 3x10^14 cm^-2 is used to probe the subband structure of the 2DEGs.…
We present two spatial-multiplexed switch-and-select (S&S) 8x8 optical switches incorporating a tri-layer SiN-on-Si platform, one equipped with thermo-optic (T-O) and the other electro-optic (E-O) switching elements. To the best of our…
Integrated sensing and communication (ISAC) will greatly enhance the efficiency of physical resource utilization. The design of ISAC signal based on the orthogonal frequency division multiplex (OFDM) signal is the mainstream. However, when…
As a model for describing finite-size effects in topological insulator thin films, we study a one-dimensional (1D) effective model of a topological insulator (TI). Using this effective 1D model, we reveal the precise correspondence between…
This paper proposes a general two directional simultaneous inference (TOSI) framework for high-dimensional models with a manifest variable or latent variable structure, for example, high-dimensional mean models, high-dimensional sparse…
We fabricated silicon metal-oxide-semiconductor field effect transistors where an additional sodium-doped layer was incorporated into the oxide to create potential fluctuations at the Si-SiO2 interface. The amplitude of these fluctuations…