Tri-layer SiN-on-Si 8x8 Optical Switches with Thermo-optic and Electro-optic Actuators
Abstract
We present two spatial-multiplexed switch-and-select (S&S) 8x8 optical switches incorporating a tri-layer SiN-on-Si platform, one equipped with thermo-optic (T-O) and the other electro-optic (E-O) switching elements. To the best of our knowledge, the electro-optic switch fabric is the first-of-its-kind device assembled in such a multi-layer platform. The shuffle between the multiplexer and demultiplexer array is established via a tri-layer Si-SiN-SiN structure, creating a three-dimensional crossing-free photonic shuffle network. At the same time, the implementation of the S&S topology can effectively suppress the first-order crosstalk. The measured on-chip losses for the T-O switch range from 2.1 to 11.5 dB, with a 5.2 dB average, while the E-O device exhibits losses between 8.7 to 19.6 dB, with a 15.1 dB average. Both switches demonstrate ultra-low crosstalk, with measured ranges of 38.9 to 50.8 dB and 42.8 to 51.9 dB, for the T-O and E-O devices respectively. The switching times are 17.6 us for the T-O switch and 5.9 ns with the E-O actuated one. These performance metrics highlight the potential of these switches for next-generation data center applications.
Keywords
Cite
@article{arxiv.2502.11297,
title = {Tri-layer SiN-on-Si 8x8 Optical Switches with Thermo-optic and Electro-optic Actuators},
author = {Bohao Sun and Chunhui Yao and Tongyun Li and Ziyao Zhang and Peng Bao and Minjia Chen and Alan Yilun Yuan and Chenxi Tan and Zhitian Shi and Adrian Wonfor and Seb Savory and Keren Bergman and Richard Penty and Qixiang Cheng},
journal= {arXiv preprint arXiv:2502.11297},
year = {2025}
}