Spin-orbit torque (SOT) enables efficient electrical control of magnetization, offering a pathway towards low-power spintronic devices. Magnetic topological insulators (TIs), with spin-momentum-locked surface states and intrinsic ferromagnetism, provide a unique platform for realizing SOT switching of edge current chirality in quantum anomalous Hall (QAH) insulators. In this work, we employ molecular beam epitaxy to synthesize a series of magnetic TI trilayers with controlled layer thicknesses on heat-treated SrTiO3(111) substrates. Electrical transport measurements reveal that SOT-driven magnetization reversal and the associated switching of edge current chirality are governed by the SrTiO3(111) substrate-induced charging effect, which generates an asymmetric chemical-potential alignment between the top and bottom magnetic TI layers. Furthermore, we demonstrate that the switching polarity and efficiency can be tuned through heterostructure design, gate voltage, and in-plane magnetic field, consistent with SOT symmetry. These findings identify chemical potential asymmetry as the origin of the large SOT switching ratio in magnetic TI trilayers and establish a route for electrical control of edge current chirality in QAH insulators. This work advances the understanding of SOT switching mechanism in magnetic topological materials and paves the way for next-generation, energy-efficient QAH-based logic and memory devices.
@article{arxiv.2605.21297,
title = {Designing Magnetic Topological Insulator Trilayers for Highly-Efficient Spin-Orbit Torque Switching},
author = {Ling-Jie Zhou and Deyi Zhuo and Han Tay and Zi-Jie Yan and Pu Xiao and Xiaoda Liu and Bomin Zhang and Cui-Zu Chang},
journal= {arXiv preprint arXiv:2605.21297},
year = {2026}
}