Related papers: TID-Effect Compensation and Sensor-Circuit Cross-T…

We are investigating adaption of SOI pixel devices for future high energy physic(HEP) experiments. The pixel sensors are required to be operational in very severe radiation environment. Most challenging issue in the adoption is the TID…

We are developing monolithic pixel sensors based on a 0.2 $\mu$m fully-depleted Silicon-on-Insulator (SOI) technology for HEP experiment applications. The total ionizing dose (TID) effect is the major issue in the applications for hard…

We are developing monolithic pixel detectors based on SOI technology for high energy physics, X-ray applications and so on.To employ SOI pixel detector on such radiation environments, we have to solve effects of total ionizing dose (TID)…

The total ionizing dose irradiation (TID) effects of partially depleted (PD) silicon-on-insulator (SOI)devices which fabricated with a commercial 0.2 um SOI process are investigated. Experimental results show an original phenomenon that the…

We fabricated a readout ASIC with the fully depleted silicon-on-insulator (FD-SOI) technology for the pair-monitor. The pair-monitor is a silicon pixel device that measures the beam profile of the international linear collider. It utilizes…

We investigate the crosstalk between Transition-Edge Sensor (TES) pixels in a prototype 24-pixel hard X-ray array fabricated at the Advanced Photon Source, Argonne National Laboratory. Analysis shows thermal cross talk, possibly associated…

In this paper we have developed a two dimensional (2D) analytical model for surface potential and drain current for a long channel Dual Material Gate (DMG) Silicon-on-Insulator (SOI) Tunneling Field Effect Transistor (TFET). This model…

The role of interface states and dielectric mismatch is studied in ultrathin P-doped silicon-on-insulator (SOI) films with thickness of the device layer ($H_{SOI}$) varying from 30 to 8 nm and dopant concentration ($n_{D}$) ranging from…

This paper presents the detailed simulation of a double-pixel structure for charged particle detection based on the 3D-trench silicon sensor developed for the TIMESPOT project and a comparison of the simulation results with measurements…

The performance of a double sided silicon strip detector (DSSSD), used for position and energy detection of heavy ions, is reported. The analysis shows that the incomplete charge collection (ICC) and charge sharing (CS) effects of the DSSSD…

The X-ray SOI pixel sensor onboard the FORCE satellite will be placed in the low earth orbit and will consequently suffer from the radiation effects mainly caused by geomagnetically trapped cosmic-ray protons. Based on previous studies on…

Three Dimensional Integrated Circuits (3D IC) offer lower power consumption, higher performance, higher bandwidth, and scalability over the conventional two dimensional ICs. Through-Silicon Via (TSV) is one of the fabrication mechanisms…

We describe DSiD, a fast simulation Delphes detector for the International Linear Collider (ILC) based on the full simulation performance of the SiD detector. SiD is one of two detectors described in the ILC Technical Design Report (TDR).…

The performance of a device-to-device (D2D) underlay communication system is limited by the co-channel interference between cellular users (CUs) and D2D devices. To address this challenge, an intelligent reflecting surface (IRS) aided D2D…

We experimentally investigated total ionizing dose (TID) response of the input-stage PNP transitor in an operational amplifier LM324N with various initial displacement damage (IDD). We found that, the damage first decreases and then…

Non-linear self-interference (SI) cancellation constitutes a fundamental problem in full-duplex communications, which is typically tackled using either polynomial models or neural networks. In this work, we explore the applicability of a…

A low noise and wide dynamic range event driven detector for the detection of X-Ray energy is realized using 0.2 [um] Silicon on insulator (SOI) technology. Pixel circuits are divided into two parts; signal sensing circuit and event…

In order to tackle the charge injection issue that had perplexed the counting type SOI pixel for years, two successive chips CPIXTEG3 and CPIXTEG3b were developed utilizing two shielding mechanisms, Nested-well and Double-SOI, in the LAPIS…

Integrating sphere (IS) techniques combined with an inverse adding doubling (IAD) algorithm have been widely used for determination of optical properties of ex vivo tissues. Semi-infinite samples are required in such cases. The aim of this…

We present the electro-thermal characterization of transition-edge sensor (TES) detectors suspended on Si membranes fabricated using a silicon-on-insulator (SOI) wafer. The use of an all-silicon fabrication platform, in contrast to the more…