Related papers: TID-Effect Compensation and Sensor-Circuit Cross-T…
A superconducting quantum interference device (SQUID), functioning as a nonlinear response device, typically requires the incorporation of a flux-locked loop (FLL) circuit to facilitate linear amplification of the current signal transmitted…
This paper examines the performance degradation of a MOS device fabricated on silicon-on-insulator (SOI) due to the undesirable short-channel effects (SCE) as the channel length is scaled to meet the increasing demand for high-speed…
Transition Radiation (TR) plays an important role in particle identification in high-energy physics and its characteristics provide a feasible method of energy calibration in the energy range up to 10 TeV, which is of interest for dark…
In this work we report a shielded ionization discharge (SID) probe which is conceptualized, designed and implemented for measuring temporal and spatial density profiles in a pulsed molecular beam. The probe detects and provides profiles of…
Sub-band-gap (SBG) impact ionization (II) enables steep subthreshold slope that enables devices to overcome the thermal limit of 60mV/decade. This phenomenon at low voltage enables various applications in logic, memory and neuromorphic…
Topological insulator field-effect transistors (TIFETs) built on 2-D quantum spin Hall insulators are being considered as advanced logic transistors due to their potentially superior performance originating from the dissipationless edge…
We performed low temperature shot noise measurements in Superconductor (TiN) - strongly disordered normal metal (heavily doped Si) weakly transparent junctions. We show that the conductance has a maximum due to coherent multiple reflections…
This article proposes doubly robust estimators for the average treatment effect on the treated (ATT) in difference-in-differences (DID) research designs. In contrast to alternative DID estimators, the proposed estimators are consistent if…
The D-band, spanning 110 GHz to 170 GHz, has emerged as a relevant frequency range for future mobile communications and radar sensing applications, particularly in the context of 6G technologies. This demonstration presents a…
Device simulation plays a crucial role in complementing experimental device characterisation by enabling deeper understanding of internal physical processes. However, for simulations to be trusted, experimental validation is essential to…
Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-effect transistors. However, those quantum effects, such as…
The deployment of extensive sensor arrays in nuclear reactors is infeasible due to challenging operating conditions and inherent spatial limitations. Strategically placing sensors within defined spatial constraints is essential for the…
This paper proposes the joint use of digital self-interference cancellation (DSIC) and spatial suppression to mitigate far-field self-interference (SI) in full-duplex multiple-input multiple-output (MIMO) systems. Far-field SI, caused by…
A monolithic pixel sensor in deep-submicron Silicon-On-Insulator (SOI) CMOS technology has been designed, manufactured and characterised. This technology is of significant interest for applications in particle tracking and imaging. The…
The MIDNA application specific integrated circuits (ASICs) are a series of skipper-CCD readout chips fabricated in a 65 nm low-power CMOS process that implement a correlated double sampling signal processing chain based on dual-slope…
We present a study of the energy resolution of transition-edge sensors (TESs) for the detection of electrons in the 100 eV kinetic energy range. The TES is a Ti-Au bilayer with an active area of $(60 \times 60)$ $\mu \text{m}^2$ and a…
This communication deals with a theoretical study of the hot spot onset (HSO) in cellular bipolar power transistors. This well-known phenomenon consists of a current crowding within few cells occurring for high power conditions, which…
In the standard MOSFET description of the drain current $I_{D}$ as a function of applied gate voltage $V_{GS}$, the subthreshold swing $SS(T)\equiv dV_{GS}/d\log I_{D}$ has a fundamental lower limit as a function of temperature $T$ given by…
A microwave kinetic inductance detector (MKID) is a cutting-edge superconducting detector. It comprises a resonator circuit constructed with a superconducting film on a dielectric substrate. To expand its field of application, it is…
This paper presents the performance analysis of the self-interference cancellation (SIC) methods in full-duplex largescale multiple-input multiple-output systems. To mitigate selfinterference (SI), we assume that the full duplex-base…