Related papers: Efficient room-temperature light-emitters based on…
We demonstrate a free-space amplitude modulator for mid-infrared radiation (lambda=9.6 um) that operates at room temperature up to at least 20 GHz (above the -3dB cutoff frequency measured at 8.2 GHz). The device relies on the ultra-fast…
The electro-optic, acousto-optic and nonlinear properties of lithium niobate make it a highly versatile material platform for integrated quantum photonic circuits. A prerequisite for quantum technology applications is the ability to…
Several emission features mark semiconductor quantum dots as promising non-classical light sources for prospective quantum implementations. For long-distance transmission [1] and Si-based on-chip processing[2, 3], the possibility to match…
Fundamental to integrated photonic quantum computing is an on-chip method for routing and modulating quantum light emission. We demonstrate a hybrid integration platform consisting of arbitrarily designed waveguide circuits and single…
Graphene nanoribbons (GNRs) have attracted a strong interest from researchers worldwide, as they constitute an emerging class of quantum-designed materials. The major challenges towards their exploitation in electronic applications include…
(Si)GeSn semiconductors are finally coming of age after a long gestation period. The demonstration of device quality epi-layers and quantum-engineered heterostructures has meant that tunable all-group IV Si-integrated infrared photonics is…
A light-emitting-diodes (LEDs)-integrated silicon carbide (SiC) insulated gate bipolar transistors (LI-IGBT) is proposed in this paper. The novelty of the LI-IGBT depends on the photogeneration effect of III-nitride LEDs embedded in the…
Colloidal quantum dots (cQDs) are now a mature nanomaterial with optical properties customizable through varying size and composition. However, their use in optical devices is limited as they are not widely available in convenient forms…
Fast, high efficiency, and low error single photon sources are required for implementation of a number of quantum information processing applications. The fastest triggered single photon sources to date have been demonstrated using…
The optical emission spectra from Ge films on Si are markedly different from their bulk Ge counterparts. Whereas bulk Ge emission is dominated by the material's indirect gap, the photoluminescence signal from Ge films is mainly associated…
The ability to induce, observe and control quantum coherent interactions in room temperature, electrically driven optoelectronic devices is of outmost significance for advancing quantum science and engineering towards practical…
In this report, we demonstrate that Ge-NWQD (nanowire quantum dots) at low temperatures exhibit apparent Coulomb oscillations than that in Si-NWQD. These oscillations gradually disappear as the temperature increases, indicating the…
Non-polar (11-20) a-plane quantum dots (QDs) are strong candidates for both > 200 K on-chip ultrafast polarized single-photon generation and the investigation of high temperature semiconductor QD photophysics. In this work, we report…
Facilitated by recent advances in strained Ge/SiGe quantum well (QW) growth technology, superconductor-semiconductor hybrid devices based on group IV materials have been developed, potentially augmenting the functionality of quantum…
Cavity-enhanced emission of electrically controlled semiconductor quantum dots is essential in developing bright quantum devices for real-world quantum photonic applications. Combining the circular Bragg grating (CBG) approach with a…
Applications relying on mid-infrared radiation (Mid-IR, $\lambda\sim$ 3-30 $\mu$m) have progressed at a very rapid pace in recent years, stimulated by scientific and technological breakthroughs. Mid-IR cameras have propelled the field of…
Self-assembled semiconductor quantum dot is a new type of artificially designed and grown function material which exhibits quantum size effect, quantum interference effect, surface effect, quantum tunneling-Coulumb-blockade effect and…
Self-assembled InAs quantum dots (QDs) are promising optomechanical elements due to their excellent photonic properties and sensitivity to local strain fields. Microwave-frequency modulation of photons scattered from these efficient quantum…
The integration of coherent quantum emitters with silicon photonic platforms essential for scalable quantum technologies. We demonstrate electrically controlled self-assembled quantum dots embedded in GaAs waveguides bonded onto a SiO2/Si…
Atomic-scale crystal defects in Si are quantum-light sources offering tantalizing integration with existing photonic technologies. Yet, the controlled creation of near-infrared color centers for long- haul quantum communication and…