Graphene nanoribbons (GNRs) have attracted a strong interest from researchers worldwide, as they constitute an emerging class of quantum-designed materials. The major challenges towards their exploitation in electronic applications include reliable contacting, complicated by their small size (<50 nm), as well as the preservation of their physical properties upon device integration. In this combined experimental and theoretical study, we report on the quantum dot (QD) behavior of atomically precise GNRs integrated in a device geometry. The devices consist of a film of aligned 5-atoms wide GNRs (5-AGNRs) transferred onto graphene electrodes with a sub 5-nm nanogap. We demonstrate that the narrow-bandgap 5-AGNRs exhibit metal-like behavior resulting in linear IV curves for low bias voltages at room temperature and single-electron transistor behavior for temperatures below 150~K. By performing spectroscopy of the molecular levels at 13~K, we obtain addition energies in the range of 200-300 meV. DFT calculations predict comparable addition energies and reveal the presence of two electronic states within the bandgap of infinite ribbons when the finite length of the 5-AGNRs is accounted for. By demonstrating the preservation of the 5-AGNRs electronic properties upon device integration, as demonstrated by transport spectroscopy, our study provides a critical step forward in the realisation of more exotic GNR-based nano-electronic devices.
@article{arxiv.1912.10712,
title = {Controlled quantum dot formation in atomically engineered graphene nanoribbons field-effect transistors},
author = {Maria El Abbassi and Mickael Perrin and Gabriela Borin Barin and Sara Sangtarash and Jan Overbeck and Oliver Braun and Colin Lambert and Qiang Sun and Thorsten Prechtl and Akimitsu Narita and Klaus Mullen and Pascal Ruffieux and Hatef Sadeghi and Roman Fasel and Michel Calame},
journal= {arXiv preprint arXiv:1912.10712},
year = {2019}
}