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Silicon photonics is destined to revolutionize technological areas, such as short-distance data transfer and sensing applications by combining the benefits of integrated optics with the assertiveness of silicon-based microelectronics.…
Whereas the Si photonic platform is highly attractive for scalable optical quantum information processing, it lacks practical solutions for efficient photon generation. Self-assembled semiconductor quantum dots (QDs) efficiently emitting…
Monolithic integration of quantum dot (QD) gain materials onto Si photonic platforms via direct epitaxial growth is a promising solution for on-chip light sources. Recent developments have demonstrated superior device reliability in blanket…
We present an elegant and effective technology of extending the photoresponse of Si towards the IR range. Our approach is based on the use of Ag2S quantum dots planted on the surface of Si to create impurity states in Si band gap. Given the…
The lack of straightforward epitaxial integration of useful telecom lasers on silicon remains the major bottleneck for bringing optical interconnect technology down to the on-chip level. Crystalline silicon itself, an indirect…
Advances in nanotechnology provide techniques for the realisation of integrated quantum-optical circuits for on-chip quantum information processing(QIP). The indistinguishable single photons, required for such devices can be generated by…
Semiconductor quantum dots (QDs) provide an essential link between light and matter in emerging fields such as light-harvesting, all-solid-state quantum communication, and quantum computing. QDs are excellent single-photon sources and can…
The study proposes an ultra-thin back side illuminated (BSI) and top-illuminated, Ge on Si photodetector (PD), for 1 to 1.4 microns wavelength range. The Ge thickness of 350 nm allows us to achieve high-speed performance at >60 GHz, while…
Quantum dots (QDs) based on III-nitride semiconductors are promising for single photon emission at non-cryogenic temperatures due to their large exciton binding energies. Here, we demonstrate GaN QD single photon emitters operating at 300 K…
A true monolithic infrared photonics platform is within reach if strain and bandgap energy can be independently engineered in SiGeSn semiconductors. Herein, we investigate the structural and optoelectronic properties of a 1.5 {\mu}m-thick…
Quantum dots (QDs) are semiconductor nanostructures in which a three dimensional potential trap produces an electronic quantum confinement, thus mimicking the behaviour of single atomic dipole-like transitions. However unlike atoms, QDs can…
We demonstrate a new quantum-confined semiconductor material based on GaSb quantum dots (QDs) embedded in single-crystalline AlGaSb matrix by filling droplet-etched nanoholes. The droplet-mediated growth mechanism allows formation of low QD…
Electrons and holes confined in quantum dots define an excellent building block for quantum emergence, simulation, and computation. In order for quantum electronics to become practical, large numbers of quantum dots will be required,…
Semiconductor quantum dots (QDs) are key building blocks for photonic quantum technologies, enabling practical sources of non-classical light. A central challenge for scalable integration is the direct epitaxial growth of high-quality…
Optically active III-V group semiconductor quantum dots (QDs) are the leading element of the upcoming safe quantum communication. However, the entire electronic and IT infrastructure relies on silicon-based devices, with silicon also…
Colloidal quantum dots (cQDs) recently emerged as building blocks for semiconductor materials with tuneable properties. Electro-hydrodynamic printing can be used to obtain sub-micrometre patterns of cQDs without elaborate and aggressive…
We propose using Quantum Dots as novel targets to probe sub-GeV dark matter-electron interactions. Quantum dots are nanocrystals of semiconducting material, which are commercially available, with gram-scale quantities suspended in…
Epitaxially-grown semiconductor quantum dots (QDs) provide an attractive platform for the development of deterministic sources of high-quality quantum states of light. Such non-classical light sources are essential for quantum information…
In this paper, we demonstrate the infrared photoluminescence emission from Ge(Si) quantum dots enhanced with collective Mie modes of silicon nanopillars. We show that the excitation of band edge dipolar modes of a linear nanopillar array…
We study the optical properties of hydrogen passivated silicon, germanium and mixed Ge/Si core/shell quantum dots (QDs) using high accuracy Density Functional Theory (DFT) and time-dependent DFT (TDFT). We employ the hybrid DFT functional…