We present an elegant and effective technology of extending the photoresponse of Si towards the IR range. Our approach is based on the use of Ag2S quantum dots planted on the surface of Si to create impurity states in Si band gap. Given the variety of available QDs and the ease of extending the photoresponse of Si towards the IR range, our findings open a path towards the future study and development of Si detectors for technological applications. The current research at the interface of physics and chemistry is also of fundamental importance to the development of Si optoelectronics of the IR range.
@article{arxiv.1903.00256,
title = {Room temperature Silicon detector for IR range coated with Ag2S Quantum Dots},
author = {Ivan Tretyakov and Alexander Shurakov and Sergey Ryabchun and Alexey Perepelitsa and Natalya Kaurova and Sergey Svyatodukh and Tatyana Zilberley and Mikhail Smirnov and Oleg Ovchinnikov and Gregory Goltsman},
journal= {arXiv preprint arXiv:1903.00256},
year = {2019}
}